13 Patents
- US124777222025Semiconductor Memory Device Comprises a Bit Line Having a Plurality of Pins Extending Toward a Substrate
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites - 0 cites
- US122009232025Method of Fabricating Semiconductor Device Having Bit Line Comprising a Plurality of Pins Extending Toward the Substrate
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites - US121144872024Semiconductor Memory Device Having Bit Lines and Isolation Fins Disposed on the Substrate
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites - 0 cites
- US118774332024Storage Node Contact Structure of a Memory Device
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites - US117658812023Semiconductor Structure with Capacitor Landing Pad and Method of Making the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites - US117440622023Semiconductor Device Having Bit Line Comprising a Plurality of Pins Extending Toward the Substrate
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites - US117372572023Semiconductor Device and Manufacturing Method Thereof
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites - US117069112023Method of Fabricating Semiconductor Memory Having a Second Active Region Disposed at an Outer Side of a First Active Region
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites - US116769942023Manufacturing Method of Semiconductor Device and Semiconductor Device
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites - US116006222023Method of Forming Semiconductor Memory Device Comprises a Bit Line Having a Plurality of Pins Extending Along a Direction Being Perpendicular to a Substrate
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites - US115630122023Semiconductor Structure with Capacitor Landing Pad and Method of Making the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites