7 Patents
- US124396572025Confined Source/drain Epitaxy Regions and Method Forming Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123639932025Semiconductor Device Having Merged Epitaxial Features with Arc-like Bottom Surface and Method of Making the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US121425602024Semiconductor Packages and Methods of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119489712024Confined Source/drain Epitaxy Regions and Method Forming Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119087422024Semiconductor Device Having Merged Epitaxial Features with Arc-like Bottom Surface and Method of Making the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117697712023Finfet Device Having Flat-top Epitaxial Features and Method of Making the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites