33 Patents
- US125686482026Backside Source/drain Contacts and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US125573672026Source/drain Regions Formed Using Metal Containing Block Masks
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US125325182026Transistor Source/drain Regions and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124379902025Semiconductor Device and Method of Manufacture
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US124190842025Methods of Forming Transistor Source/drain Regions Comprising Carbon Liner Layers
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- 0 cites
- US123962422025Nano-structure Transistors with Air Inner Spacers and Methods Forming Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123896712025Source/drain Regions of Semiconductor Devices and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123639452025Method of Forming Source/drain Regions with Quadrilateral Layers
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123639892025Semiconductor Device with Leakage Current Suppression and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123494262025Source/drain Device and Method of Forming Thereof
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123362372025Source/drain Regions of Semiconductor Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123026152025Epitaxial Structures Exposed in Airgaps for Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122552552025Method of Manufacturing a Finfet with Merged Epitaxial Source/drain Regions
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122437832025Epitaxial Source/drain Recess Formation with Metal-comprising Masking Layers and Structures Resulting Therefrom
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122439312025Source/drain Epitaxial Layers for Transistors
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122372302025Semiconductor Device with Leakage Current Suppression and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121549742024Source/drain Formation with Reduced Selective Loss Defects
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121321182024Semiconductor Device Having a Multilayer Source/drain Region and Methods of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US120740712024Source/drain Structures and Method of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119905112024Source/drain Device and Method of Forming Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US119234092024Epitaxial Structures Exposed in Airgaps for Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118551882023Source/drain Formation with Reduced Selective Loss Defects
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US118044872023Source/drain Regions of Semiconductor Devices and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US116887932023Integrated Circuit Structure and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116770132023Source/drain Epitaxial Layers for Transistors
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US116005342023Source/drain Structures and Method of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites