21 Patents
- US125751052026Multiple-stack Three-dimensional Memory Device and Fabrication Method Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US1226253920253D NAND Memory Device and Method of Forming the Same
Yangtze Memory Technologies Co., Ltd.
0 cites - US122197732025Embedded Pad Structures of Three-dimensional Memory Devices and Fabrication Methods Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites - 0 cites
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- US119688322024Multiple-stack Three-dimensional Memory Device and Fabrication Method Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites - US119439232024Three-dimensional Memory Devices and Fabrication Methods Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US119439282024Method for Forming Channel Hole Plug of Three-dimensional Memory Device
Yangtze Memory Technologies Co., Ltd.
0 cites - 0 cites
- US118567762023Structure of 3D NAND Memory Device and Method of Forming the Same
Yangtze Memory Technologies Co., Ltd.
0 cites - US118495822023Memory Stacks Having Silicon Nitride Gate-to-gate Dielectric Layers and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US118442162023Three-dimensional Memory Devices and Fabricating Methods Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites - US1182565620233D NAND Memory Device and Method of Forming the Same
Yangtze Memory Technologies Co., Ltd.
0 cites - US118007102023Three-dimensional Memory Devices and Fabricating Methods Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites - US117587222023Three-dimensional Memory Device with Deposited Semiconductor Plugs and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US117587292023Three-dimensional Memory Device Having a Shielding Layer and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US117587312023Three-dimensional Memory Device Having a Shielding Layer and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US117069202023Three-dimensional Memory Devices and Fabrication Methods Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US116659032023Three-dimensional Memory Devices and Fabrication Methods Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US116056442023Memory Stacks Having Silicon Nitride Gate-to-gate Dielectric Layers and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US115813322023Three-dimensional Memory Devices and Fabrication Methods Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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