37 Patents
- US125816492026Semiconductor Device, Fabrication Method, and Memory System
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US125686242026Memory Device Containing TSG Deck and Method of Forming the Same
Yangtze Memory Technologies Co., Ltd.
0 cites - US125433182026Three-dimensional Memory with Stacked Select-gate Structures
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US125324682026Three-dimensional Memory Devices with Channel Structures Having Plum Blossom Shape
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - 0 cites
- US124842262025Three-dimensional NAND Memory Device and Method That Eliminate Leakage Currents and Short Circuits
Yangtze Memory Technologies Co., Ltd.
0 cites - US124530942025Method for Removing Sacrificial Layers of a Stack of a Three-dimensional Semiconductor Structure in Two Steps
Yangtze Memory Technologies Co., Ltd.
0 cites - US124023092025Three-dimensional Memory Devices and Fabricating Methods Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites - 0 cites
- US123882912025Thermal-power Direct-hung Energy-storage Frequency Modulation Plant Backup Power System
Huaneng Luoyuan Power Generation Co., Ltd
0 cites - US122860372025Automobile Seat Integrated with Height Adjustment and Angle Adjustment
Magna Seating Research & Development (Chongqing) Co., Ltd.
0 cites - US122740662025Memory Peripheral Circuit Having Three-dimensional Transistors and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US121855362024Three-dimensional Memory Devices with Reduced Cell Interference and Fabrication Methods Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US121710982024Three-dimensional Memory Device with Improved Charge Lateral Migration and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US121623922024Seamless Leg Rest Device for Automobile Seats
MAGNA SEATING RESEARCH & DEVELOPMENT (CHONGQING) CO., Ltd.
0 cites - US121574032024Adjusting Apparatus for Achieving Lying Posture in Vehicle Seat
Magna Seating Research & Development (Chongqing) Co., Ltd.
0 cites - US121050582024Method and System for Determining Acoustic Emission (AE) Parameters of Rock Based on Moment Tensor Analysis
INSTITUTE OF GEOLOGY AND GEOPHYSICS, CHINESE ACADEMY OF SCIENCES
0 cites - US120894052024Three-dimensional Memory Devices with Channel Structures Having Plum Blossom Shape
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US120637842024Memory Peripheral Circuit Having Three-dimensional Transistors and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US120528652024Three-dimensional Memory Devices with Channel Structures Having Plum Blossom Shape and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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- US120355242024Channel Structures Having Protruding Portions in Three-dimensional Memory Device and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US120155282024Multi-functional Integrated Network Modal Management System and Management Method for User-defined Network Modal
ZHEJIANG LAB
0 cites - US119945932024Detection Method and Device Based on Laser Radar, and Computer Readable Storage Medium
ZTE CORPORATION
0 cites - US119778652024Software and Hardware Collaborative Compilation Processing System and Method
ZHEJIANG LAB
0 cites - US119554222024On-chip Capacitors in Semiconductor Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US119250192024Channel Structures Having Protruding Portions in Three-dimensional Memory Device and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US119178232024Channel Structures Having Protruding Portions in Three-dimensional Memory Device and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US118774492024Methods for Forming Three-dimensional Memory Devices with Channel Structures Having Plum Blossom Shape
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US118243562023System and Method of Black Start for New Power System with Energy Storage Configuration
Xi'an Thermal Power Research Institute Co., Ltd.
0 cites - US118020842023Rock Similar Material Satisfying Water-induced Strength Degradation Characteristic and Preparation Method and Use Thereof
Institute Of Geology And Geophysics, Chinese Academy Of Sciences
0 cites - US117992982023System and Method for Frequency Modulation Based on Direct Current Controllable Load
XI'AN THERMAL POWER RESEARCH INSTITUTE CO., Ltd
0 cites - US117513852023Three-dimensional Memory Devices and Fabricating Methods Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites - US117168472023Three-dimensional NAND Memory Device with Split Gates
Yangtze Memory Technologies Co., Ltd.
0 cites - US116520422023On-chip Capacitors in Semiconductor Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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