Patents/Inventors

Lan Yu

Voorheesville, NYUS46 patents

45 Patents

US125987762026
Nanosheet Epitaxy with Full Bottom Isolation
International Business Machines Corporation
0 cites
US125768752026
Vehicle Maneuver Estimation Accuracy Conveyance
QUALCOMM INCORPORATED
0 cites
US124708992025
Alternative Coordinate System for Sensor Sharing
Qualcomm Incorporated
0 cites
US124715022025
High Quality Quantum Computer Components
Applied Materials, Inc.
0 cites
US124478532025
Energy Facility Arranged to Prioritize Favorable Energy Management Actions to Happen Earlier and Non-favorable Energy Management Actions to Happen Later
FORD GLOBAL TECHNOLOGIES, LLC
0 cites
US124459012025
Congestion Control by a Sidelink Midlayer Framework
Qualcomm Incorporated
0 cites
US124117002025
Assigning Control and Variants to Dynamically Defined Time Periods in Application State Experiments
Maplebear Inc.
0 cites
US123363362025
Indium-gallium-nitride Light Emitting Diodes with Light Reflecting Mirrors
Applied Materials, Inc.
0 cites
US123086492025
Control of Vehicle and Home Energy Storage Systems
Ford Global Technologies, LLC
0 cites
US122950222025
Transmission Control in Application Layer Based on Radio Bearer Quality Metrics in Vehicular Communication
QUALCOMM Incorporated
0 cites
US122876432025
Leader Selection in V2X Group Management
QUALCOMM Incorporated
0 cites
US122000572025
Sensor Performance Indication
QUALCOMM Incorporated
0 cites
US121764162024
Stacked Nanosheet Transistor with Defect Free Channel
International Business Machines Corporation
0 cites
US121764342024
Strained Semiconductor FET Devices with Epitaxial Quality Improvement
International Business Machines Corporation
0 cites
US121704562024
Control of Vehicle and Home Energy Storage Systems
Ford Global Technologies, LLC
0 cites
US121323512024
Stator Punching Piece, Motor, Compressor and Household Appliance
ANHUI MEIZHI PRECISION MANUFACTURING CO., Ltd.
0 cites
US121193412024
Electrostatic Discharge Diode Having Dielectric Isolation Layer
International Business Machines Corporation
0 cites
US120558212024
Structure and Method of Bi-layer Pixel Isolation in Advanced LCOS Back-plane
Applied Materials, Inc.
0 cites
US120027532024
Electronic Fuse with Passive Two-terminal Phase Change Material and Method of Fabrication
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US119959852024
Intersection Trajectory Determination and Messaging
QUALCOMM Incorporated
0 cites
US119787962024
Contact and Isolation in Monolithically Stacked VTFET
International Business Machines Corporation
0 cites
US119518652024
Vehicle Recharge of Home Energy Storage
FORD GLOBAL TECHNOLOGIES, LLC
0 cites
US119553692024
Recessed Local Interconnect Formed Over Self-aligned Double Diffusion Break
International Business Machines Corporation
0 cites
US119425572024
Nanosheet Transistor with Enhanced Bottom Isolation
International Business Machines Corporation
0 cites
US119086782024
Method of CMP Integration for Improved Optical Uniformity in Advanced LCOS Back-plane
Applied Materials, Inc.
0 cites
US119089142024
Methods of Forming Semiconductor Structures
Applied Materials, Inc.
0 cites
US119089442024
Contact Formation for Vertical Field Effect Transistors
International Business Machines Corporation
0 cites
US118944232024
Contact Resistance Reduction in Nanosheet Device Structure
International Business Machines Corporation
0 cites
US118944422024
Full Nanosheet Airgap Spacer
International Business Machines Corporation
0 cites
US118800522024
Structure and Method of Mirror Grounding in Lcos Devices
Applied Materials, Inc.
0 cites
US118815392024
Structure and Method of Advanced Lcos Back-plane Having Highly Reflective Pixel via Metallization
Applied Materials, Inc.
0 cites
US118308242023
Edge Protection on Semiconductor Substrates
Applied Materials, Inc.
0 cites
US117725072023
Energy Facility Leveraging Electric Vehicle Charging to Increase Usage of Renewable Energy
Ford Global Technologies, LLC
0 cites
US117696652023
Power Device Structures and Methods of Making
Applied Materials, Inc.
0 cites
US117497442023
Fin Structure for Vertical Transport Field Effect Transistor
International Business Machines Corporation
0 cites
US117157942023
VTFET with Cell Height Constraints
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US117105212023
Static Random-access Memory Cell Design
International Business Machines Corporation
0 cites
US117054902023
Graded Doping in Power Devices
Applied Materials, Inc.
0 cites
US117055042023
Stacked Nanosheet Transistor with Defect Free Channel
International Business Machines Corporation
0 cites
US116158422023
Mixed Conducting Volatile Memory Element for Accelerated Writing of Nonvolatile Memristive Device
International Business Machines Corporation
0 cites
US116161402023
Vertical Transport Field Effect Transistor with Bottom Source/drain
International Business Machines Corporation
0 cites
US116057412023
Methods of Forming Doped Silicide Power Devices
Applied Materials, Inc.
0 cites
US115860672023
Structure and Method of Advanced Lcos Back-plane Having Robust Pixel via Metallization
Applied Materials, Inc.
0 cites
US115734522023
Method for Lcos DBR Multilayer Stack Protection via Sacrificial Hardmask for RIE and CMP Processes
Applied Materials, Inc.
0 cites
US115576512023
Nanosheet Transistors with Inner Airgaps
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites