22 Patents
- US126181462026System and Method for Forming Large-area Electronic-grade Metal Chalcogen Thin Films
The University Of Hong Kong
0 cites - US125573452026Semiconductor Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US124396502025CMOS Fabrication Methods for Back-gate Transistor
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124008602025Semiconductor Device with Two-dimensional Materials
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123879442025Semiconductor Device and Method of Manufacturing Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123641702025Resistive Memory Devices Using a Carbon-based Conductor Line and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US122373752025Semiconductor Structure of Stacked Two-dimensional Material Layers
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122119312025Fin Field-effect Transistor Device with Low-dimensional Material and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US121703232024Nano Transistors with Source/drain Having Side Contacts to 2-D Material
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121661132024Semiconductor Device and Method of Fabricating the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121512132024Method of Manufacturing Semiconductor Devices Including the Steps of Removing One or More of the Nanotubes from the Stack of Nanotubes, And/or Removing Spacers That Surrounds Each of the Plurality of Nanotubes, and Forming Gate Dielectric And/or Gate Electrode to the Nanotubes
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119555272024Nano Transistors with Source/drain Having Side Contacts to 2-D Material
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US119232032024Semiconductor Device and Method of Manufacturing Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119107322024Resistive Memory Devices Using a Carbon-based Conductor Line and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US118548952023Transistors with Channels Formed of Low-dimensional Materials and Method Forming Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118241062023Semiconductor Device and Method of Fabricating the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117842252023Semiconductor Structure, Method of Forming Stacked Unit Layers and Method of Forming Stacked Two-dimensional Material Layers
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117495282023Method of Manufacturing Semiconductor Devices Including the Steps of Removing a Plurality of Spacers That Surrounds Each of the Plurality of Nanotubes Into a Layer of Nanotubes, and Forming Gate Dielectric And/or Gate Electrode
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116886052023Semiconductor Device with Two-dimensional Materials
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US115811852023Field Effect Transistor Using Transition Metal Dichalcogenide and a Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites