19 Patents
- 0 cites
- US124955782025Semiconductor Devices Including Source/drain Layers and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US123289372025Integrated Circuit Devices and Methods of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US122888052025Integrated Circuit Device and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122565642025Semiconductor Device Having a Liner Layer and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122438742025Method of Forming a Static Random-access Memory (SRAM) Cell with Fin Field Effect Transistors
Samsung Electronics Co., Ltd.
0 cites - 0 cites
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- US120949752024Active Pattern Structure and Semiconductor Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US120466322024Semiconductor Device Having Air Gap Between Gate Electrode and Source/drain Pattern
Samsung Electronics Co., Ltd.
0 cites - US120340432024Integrated Circuit Device and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US118880282024Semiconductor Device Having a Liner Layer and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- 0 cites
- US117497542023Active Pattern Structure and Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US116264012023Integrated Circuit Devices and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US116057112023Semiconductor Device Having an Air Gap Between Gate Electrode and Source/drain Pattern
SAMSUNG ELECTRONICS CO., Ltd.
0 cites