32 Patents
- US125934492026Vertical Nonvolatile Memory Device Including Gate Electrodes with Metal-doped Graphene
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US125060742025Interconnect Structure to Reduce Contact Resistance, Electronic Device Including the Same, and Method of Manufacturing the Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - US124215982025Nanocrystalline Graphene and Method of Forming Nanocrystalline Graphene
Samsung Electronics Co., Ltd.
0 cites - US124009752025Interconnect Structure and Electronic Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US123896302025Vertical Channel Transistor Including a Graphene Insertion Layer Beweeen a Source/drain Electrode and a Channel Pattern
Samsung Electronics Co., Ltd.
0 cites - US123781202025Wiring Including Graphene Layer and Method of Manufacturing the Same
Seoul National University R&DB Foundation
0 cites - US123693592025Thin Film Structure and Electronic Device Including Two-dimensional Material
Samsung Electronics Co., Ltd.
0 cites - US123599112025Method of Calculating Thickness of Graphene Layer and Method of Measuring Content of Silicon Carbide by Using XPS
Samsung Electronics Co., Ltd.
0 cites - US123410632025Interconnect Structure, Electronic Device Including the Same, and Method of Manufacturing Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - US123343572025Method of Forming Material Layer
Research & Business Foundation Sungkyunkwan University
0 cites - US123362592025Electronic Device Including Two-dimensional Material and Method of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites - US122975322025Metal Chalcogenide Film and Method and Device for Manufacturing the Same
Research & Business Foundation Sungyunkwan University
0 cites - US122625272025Vertical-channel Cell Array Transistor Structure and Dram Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US122179582025Method of Pre-treating Substrate and Method of Directly Forming Graphene Using the Same
Samsung Electronics Co., Ltd.
0 cites - US121837802024Metal-to-semiconductor Contact Including a 2D Crystal Material Layer
Samsung Electronics Co., Ltd.
0 cites - US121837832024Stacked Structure Including Two-dimensional Material and Method of Fabricating the Stacked Structure
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US120806492024Semiconductor Memory Device and Apparatus Including the Same
UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
0 cites - US120466562024Semiconductor Device Including Surface-treated Semiconductor Layer
Samsung Electronics Co., Ltd.
0 cites - US119759712024Methods of Forming Graphene and Graphene Manufacturing Apparatuses
Samsung Electronics Co., Ltd.
0 cites - US119062912024Method of Calculating Thickness of Graphene Layer and Method of Measuring Content of Silicon Carbide by Using XPS
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US118878492024Method of Forming Transition Metal Dichalcogenidethin Film and Method of Manufacturing Electronic Device Including the Same
Research & Business Foundation, Sungkyunkwan University
0 cites - US118813992024Method of Forming Transition Metal Dichalcogenide Thin Film
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
0 cites - US118697682024Method of Forming Transition Metal Dichalcogenide Thin Film
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US117086332023Metal Chalcogenide Film and Method and Device for Manufacturing the Same
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
0 cites - US116826222023Interconnect Structure Having Nanocrystalline Graphene Cap Layer and Electronic Device Including the Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - US116262822023Graphene Structure and Method of Forming Graphene Structure
Samsung Electronics Co., Ltd.
0 cites - US116265022023Interconnect Structure to Reduce Contact Resistance, Electronic Device Including the Same, and Method of Manufacturing the Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US115453582023Method of Forming Transition Metal Dichalcogenide Thin Film
Research & Business Foundation Sungkyunkwan University
0 cites