4 Patents
- US125751222026Fin-based Field Effect Transistor (FET) Source/drain Strain to Enhance Driver Current and Performance
QUALCOMM INCORPORATED
0 cites - US125139552025Transistors Having Different Channel Lengths and Comparable Source/drain Spaces
QUALCOMM INCORPORATED
0 cites - US125060352025Self-aligned Source/drain Contact Structure and Method of Manufacturing the Same
QUALCOMM Incorporated
0 cites - 0 cites