5 Patents
- US118482852023Semiconductor Chip Including Buried Dielectric Pattern at Edge Region, Semiconductor Package Including the Same, and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117988662023Semiconductor Device Including via Structures with Undercut Portions and Semiconductor Package Including the Same
SAMSUNG ELECTRONICS CO, Ltd.
0 cites - 0 cites
- US117496142023Through-silicon via (TSV) Key for Overlay Measurement, and Semiconductor Device and Semiconductor Package Including TSV Key
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117354982023Through via Electrode and Device Isolation Structure Including Oxide Layer Pattern and Nitride Layer Pattern Sequentially Stacked on Inner Surface of Trench
SAMSUNG ELECTRONICS CO., Ltd.
0 cites