Patents/Inventors

Kwangjin Moon

Hwaseong-siKR34 patents

29 Patents

US126160142026
Semiconductor Device Including a Through Electrode Contacting a Backside Conductive Pattern and a Frontside Conductive Pattern and a Semiconductor Package Including the Same
Samsung Electronics Co., Ltd.
0 cites
US126047192026
Semiconductor Device Having a Through-via Structure Electrically Connected to a Contact Structure
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US125937142026
Semiconductor Device Including Bonding Enhancement Layer and Method of Forming the Same
Samsung Electronics Co., Ltd.
0 cites
US124762342025
Semiconductor Device Including Through Electrodes
Samsung Electronics Co., Ltd.
0 cites
US124245722025
Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites
US123477812025
Semiconductor Devices Having Penetration Vias
Samsung Electronics Co., Ltd.
0 cites
US123410842025
Integrated Circuit Device with Through-electrode and Electrode Landing Pad, and Semiconductor Package Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US123344772025
Semiconductor Packages
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US123006712025
Semiconductor Packages and Methods of Manufacturing the Semiconductor Packages
Samsung Electronics Co., Ltd.
0 cites
US122495582025
Semiconductor Device Including Penetration via Structure
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US120465382024
Semiconductor Device Including Through via Structure
Samsung Electronics Co., Ltd.
0 cites
US119617882024
Semiconductor Device Including Through-electrodes
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US119554082024
Integrated Circuit Semiconductor Device Including Through Silicon Via
Samsung Electronics Co., Ltd.
0 cites
US119087752024
Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US118879662024
Semiconductor Packages
Samsung Electronics Co., Ltd.
0 cites
US118879572024
Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US118240352023
Method of Manufacturing a Semiconductor Device Including Bonding Layer and Adsorption Layer
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US118109002023
Semiconductor Packages Stacked by Wafer Bonding Process and Methods of Manufacturing the Semiconductor Packages
Samsung Electronics Co., Ltd.
0 cites
US118044192023
Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites
US117912112023
Semiconductor Devices Including Through Vias and Methods of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites
US117911372023
Apparatus for Etching Substrate Bevel and Semiconductor Fabrication Method Using the Same
Samsung Electronics Co., Ltd.
0 cites
US117495872023
Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US117495862023
Semiconductor Device Including Through via Structure
Samsung Electronics Co., Ltd.
0 cites
US117282452023
Semiconductor Device and Semiconductor Package Including Penetration via Structure
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US117216282023
Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US116949802023
Semiconductor Stack and Method for Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US116643162023
Semiconductor Devices Having Penetration Vias with Portions Having Decreasing Widths
Samsung Electronics Co., Ltd.
0 cites
US116005532023
Semiconductor Device Including Through Substrate Vias and Method of Manufacturing the Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US115812792023
Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites