32 Patents
- US126044522026Compact Electrical Connection That Can Be Used to Form an SRAM Cell and Method of Making the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US125936702026Contact Formation Method and Related Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US125060342025Polishing Interconnect Structures in Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US123762772025Compact Electrical Connection That Can Be Used to Form an SRAM Cell and Method of Making the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123639472025Structure and Formation Method of Semiconductor Device with Contact Structures
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123493812025Dielectric Isolation Structure for Multi-gate Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US122781882025Different via Configurations for Different via Interface Requirements
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US122439402025Methods of Forming Air Spacers in Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US121762122024Mandrel Structures and Methods of Fabricating the Same in Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121764352024Method for Forming Fin Field Effect Transistor (finfet) Device Structure with Conductive Layer Between Gate and Gate Contact
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121660762024Semiconductor Device and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121425652024Different via Configurations for Different via Interface Requirements
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites - US121257432024Via-first Process for Connecting a Contact and a Gate Electrode
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121258512024Finfet Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121071662024Fin Field Effect Transistor (finfet) Device Structure with Isolation Layer and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US120626922024Tapered Dielectric Layer for Preventing Electrical Shorting Between Gate and Back Side Via
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120573922024Conductive Features Having Varying Resistance
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119786642024Polishing Interconnect Structures in Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119159712024Contact Formation Method and Related Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US118880492024Dielectric Isolation Structure for Multi-gate Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118551542023Vertical Interconnect Features and Methods of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118567452023Compact Electrical Connection That Can Be Used to Form an SRAM Cell and Method of Making the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- 0 cites
- US116827292023Methods of Forming Air Spacers in Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116705442023Via-first Process for Connecting a Contact and a Gate Electrode
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116212672023Compact Electrical Connection That Can Be Used to Form an SRAM Cell and Method of Making the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites