4 Patents
- US123175482025Optimized Proximity Profile for Strained Source/drain Feature and Method of Fabricating Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US122835962025Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118241022023Optimized Proximity Profile for Strained Source/drain Feature and Method of Fabricating Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites - US117423532023Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites