27 Patents
- US126108132026Interconnect Structure Including Charged Dielectric Layers
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US126046782026Vertical Phase Change Switch Utilizing a Thermally Conductive Sidewall Dielectric for High-efficiency Heating
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US125870102026Method for Adjusting Gate Bias Clamp Voltage, Semiconductor Device, and Bias Clamp Circuit Using the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US125818712026Phase-change Material (PCM) Radio Frequency (RF) Switching Device with Thin Self-aligned Dielectric Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US125503352026Ferroelectric Tunnel Junction (FTJ) Structures
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125435132026High-frequency, Low-voltage Switch Devices and Methods of Manufacturing Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124957232025Phase Change Material (PCM) Switch with Variably Spaced Spreader Layer Structures and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US124905032025Voltage Regulator Having Variable Output Capacitance and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US124827172025Techniques for Heat Dispersion in 3D Integrated Circuit
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124698032025Energy Harvest and Storage Device for Semiconductor Chips and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US124531012025Phase Change Material Switch Circuit for Enhanced Signal Isolation and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US124430612025Optical Device with Phase-change Materials and Method of Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US124262722025Ferroelectric Tunnel Junction Memory Devices with Enhanced Read Window
Taiwan Semiconductor Manufacturing Company, Ltd.
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- US124083492025Ferroelectric Tunnel Junctions with Conductive Electrodes Having Asymmetric Nitrogen or Oxygen Profiles
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123898142025High Electron Affinity Dielectric Layer to Improve Cycling
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123080782025One-time Programmable (OTP) Memory and Method of Operating the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US123026282025Integrated Chip with Solid-state Power Storage Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122681032025Phase Change Material Switch with Improved Thermal Confinement and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - 0 cites
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- US122009432025Memory Device Structure and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120575162024Energy Harvest and Storage Device for Semiconductor Chips and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US119787402024Semiconductor-on-insulator (SOI) Semiconductor Structures Including a High-k Dielectric Layer and Methods of Manufacturing the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US116965212023High Electron Affinity Dielectric Layer to Improve Cycling
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116318102023Bottom Electrode Structure in Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US115946322023Wakeup-free Ferroelectric Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
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