14 Patents
- US125385292026Epitaxial Fin Structures of FINFET Having an Epitaxial Buffer Region and an Epitaxial Capping Region
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124263582025Semiconductor Device Having Epitaxy Source/drain Regions
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US123493922025Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122182402025Source/drain Regions of Finfet Devices and Methods of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
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- US120627202024Epitaxial Source/drain Structure and Method of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120094272024Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119160712024Semiconductor Device Having Epitaxy Source/drain Regions
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118880462024Epitaxial Fin Structures of Finfet Having an Epitaxial Buffer Region and an Epitaxial Capping Region
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US117497522023Doping Profile for Strained Source/drain Region
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117356642023Source/drain Regions of FINFET Devices and Methods of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116109942023Epitaxial Source/drain Structure and Method of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US115749162023Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites