14 Patents
- US124179182025Semiconductor Device Having Doped Gate Dielectric Layer and Method for Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US123026272025Semiconductor Device with Non-conformal Gate Dielectric Layers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US121703212024Fin Field Effect Transistor Having Conformal and Non-conformal Gate Dielectric Layers
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121710912024Multi-layer High-k Gate Dielectric Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120515942024Method for Forming Semiconductor Device Structure with Gate
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120417602024Multi-layer High-k Gate Dielectric Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120226432024Multi-layer High-k Gate Dielectric Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120150662024Triple Layer High-k Gate Dielectric Stack for Workfunction Engineering
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119087452024Semiconductor Device with Non-conformal Gate Dieletric Layers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
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- US116055632023Semiconductor Device with Non-conformal Gate Dielectric Layers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites