5 Patents
- US124905052025Gate Dielectric Having a Non-uniform Thickness Profile
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US123006982025Isolation Structure for Preventing Unintentional Merging of Epitaxially Grown Source/drain
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119905252024Isolation Structure for Isolating Epitaxially Grown Source/drain Regions and Method of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117496832023Isolation Structure for Preventing Unintentional Merging of Epitaxially Grown Source/drain
TAIWAN SEMICONDUCTOR MANUFACTURING Co. Ltd.
0 cites