5 Patents
- US125139762025Silicon Carbide Semiconductor Device and Power Conversion Device
MITSUBISHI ELECTRIC CORPORATION
0 cites - US120807052024IGBT with Anti-parallelly Connected FWD on a Common Substrate
MITSUBISHI ELECTRIC CORPORATION
0 cites - US120574962024Silicon Carbide Semiconductor Device and Power Converter
MITSUBISHI ELECTRIC CORPORATION
0 cites - 0 cites
- US116463692023Silicon Carbide Semiconductor Device Having a Conductive Layer Formed Above a Bottom Surface of a Well Region So as Not to Be in Ohmic Connection with the Well Region and Power Converter Including the Same
MITSUBISHI ELECTRIC CORPORATION
0 cites