4 Patents
- US125575702026Method for Producing a Ferroelectric Layer or an Antiferroelectric Layer
Fraunhofer-gesellschaft Zur Förderung Der Forschung E.V
0 cites - US118897012024Memory Cell Including Polarization Retention Member(s) Including Antiferroelectric Layer Over Ferroelectric Layer
Globalfoundries U.S. Inc.
0 cites - US118695632024Memory Circuits Employing Source-line And/or Bit-line-applied Variable Programming Assist Voltages
Globalfoundries Dresden Module One Limited Liability Company & Co. KG
0 cites - US116371112023Integrated Electronic Circuit and Method of Making Comprising a First Transistor and a Ferroelectric Capacitor
FRAUNHOFER-GESELLSCHAFT ZUR FORDERUNG ANGEWANDTEN FORSCHUNG E.V.
0 cites