Patents/Inventors

Kohji Kanamori

Seongnam-siKR34 patents

34 Patents

US125074122025
Vertical Memory Devices and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites
US124023152025
Memory Device with Vertically Stacked Semiconductor Structures
Samsung Electronics Co., Ltd.
0 cites
US123546592025
Three-dimensional Semiconductor Memory Device and Electronic System Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US123100262025
Semiconductor Memory Device and Method of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites
US123025702025
Semiconductor Device and Data Storage System Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US122781652025
Semiconductor Storage Devices and Data Storage Systems Including the Same
Samsung Electronics Co., Ltd.
0 cites
US122794212025
Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites
US122680032025
Vertical Memory Devices
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US122680042025
Semiconductor Devices with String Select Channel Layer
Samsung Electronics Co., Ltd.
0 cites
US122009362025
3D Semiconductor Memory Device and Method of Fabricating Same
Samsung Electronics Co., Ltd.
0 cites
US121780462024
Semiconductor Devices Including Upper and Lower Selectors
Samsung Electronics Co., Ltd.
0 cites
US120966372024
Semiconductor Devices and Data Storage Systems Including the Same
Samsung Electronics Co., Ltd.
0 cites
US120637812024
Vertical Memory Device Having First Contact Plugs Connected to Plurality of Staircase Gate Electrodes, Respectively and Second Contact Plugs Extending Through the Staircase Gate Structure in the Pad Region
Samsung Electronics Co., Ltd.
0 cites
US120462742024
Nonvolatile Memory Device, System Including the Same, and Method for Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US120226582024
Three-dimensional (3D) Semiconductor Memory Device
Samsung Electronics Co., Ltd.
0 cites
US119744382024
Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US119633572024
Nonvolatile Memory Device and Method for Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US119633582024
Semiconductor Memory Device and Method of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites
US119250202024
Vertical Semiconductor Devices
Samsung Electronics Co., Ltd.
0 cites
US118643842024
Method for Fabricating Nonvolatile Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US118567782023
3D Semiconductor Memory Device and Method of Fabricating Same
Samsung Electronics Co., Ltd.
0 cites
US117929942023
Three-dimensional Memory Device Including a String Selection Line Gate Electrode Having a Silicide Layer
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US117788262023
Vertical Memory Devices
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US117788342023
Three-dimensional (3D) Semiconductor Memory Device
Samsung Electronics Co., Ltd.
0 cites
US117695462023
Nonvolatile Memory Device, System Including the Same and Method for Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US117299762023
Semiconductor Devices Including Upper and Lower Selectors
Samsung Electronics Co., Ltd.
0 cites
US117216842023
Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites
US117168512023
Semiconductor Memory Devices
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US116964422023
Vertical Memory Devices and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites
US116160702023
Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites
US115945442023
Semiconductor Devices with String Select Channel for Improved Upper Connection
Samsung Electronics Co., Ltd.
0 cites
US115813312023
Semiconductor Memory Device and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US115630282023
Nonvolatile Memory Device and Method for Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US115577202023
Memory Device and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites