11 Patents
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- US124143302025Multi-gate Device Including Semiconductor Fin Between Dielectric Fins and Method of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US123242182025Semiconductor Devices with Air Gaps and the Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122782762025Multi-channel Devices and Method with Anti-punch Through Process
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122307202025Semiconductor Structure with Recessed Top Semiconductor Layer in Substrate and Method of Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121838062024Semiconductor Devices and Methods of Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121660712024Dielectric Fins with Air Gap and Backside Self-aligned Contact
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118376312023Source/drain Spacer with Air Gap in Semiconductor Devices and Methods of Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116887682023Integrated Circuit Structure with Source/drain Spacers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116006952023Dielectric Fins with Air Gap and Backside Self-aligned Contact
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites