Kiyokazu Shishido

5 Patents

• US124577862025

  High Voltage Field Effect Transistors with Different Sidewall Spacer Configurations and Method of Making the Same

  Sandisk Technologies, Inc.

  0 cites
• US124263542025

  Field Effect Transistors with Reduced Gate Fringe Area and Method of Making the Same

  Sandisk Technologies, Inc.

  0 cites
• US120328372024

  Non-volatile Memory with Reduced Word Line Switch Area

  Sandisk Technologies LLC

  0 cites
• US118760962024

  Field Effect Transistors with Reduced Gate Fringe Area and Method of Making the Same

  SANDISK TECHNOLOGIES LLC

  0 cites
• US117107402023

  Field Effect Transistors with Reduced Gate Fringe Area and Method of Making the Same

  SANDISK TECHNOLOGIES LLC

  0 cites