12 Patents
- US126107542026Chalcogenide-based Material, and Switching Device and Memory Device That Include the Same
Samsung Electronics Co., Ltd.
0 cites - US125882182026Chalcogenide Material, Switching Device Including the Chalcogenide Material, and Memory Device Including the Switching Device
Samsung Electronics Co., Ltd.
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- US124712922025Phase-change Memory Structure and Phase-change Memory Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
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- US122549222025Memory Device Including Switching Material and Phase Change Material
Samsung Electronics Co., Ltd.
0 cites - US120637932024Chalcogen Compound and Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US117441672023Semiconductor Apparatus Including a Phase Change Material Layer Having a First and a Second Chalcogen Layer
Samsung Electronics Co., Ltd.
0 cites - US116932372023Phase Shift Device Including Metal-dielectric Composite Structure
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
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