42 Patents
- US124955952025Semiconductor Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US124955992025Nitride-based Semiconductor Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US124904822025Semiconductor Device Having Improved P-type Doped Nitride-based Semiconductor Layer and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - 0 cites
- US124462872025Semiconductor Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., Ltd.
0 cites - US123288932025Semiconductor Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US123175692025Semiconductor Device with Multichannel Heterostructure and Manufacturing Method Thereof
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - 0 cites
- US122059452025Semiconductor Device and Manufacturing Method Thereof
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US121990172025Semiconductor Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US121661022024Semiconductor Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US121661162024Semiconductor Device and Fabrication Method Thereof
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US121599312024Nitride-based Semiconductor Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US121548642024Iii-nitride-based Semiconductor Devices on Patterned Substrates and Method of Making the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US121549682024Semiconductor Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US121488012024Nitride-based Semiconductor Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US121258472024Nitride-based Semiconductor Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US120949312024Semiconductor Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., Ltd.
0 cites - US120741992024Semiconductor Device with a Field Plate Extending from Drain
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US120742022024Nitride-based Semiconductor Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US120683912024Semiconductor Device Structures and Methods of Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US120465932024Semiconductor Device and Manufacturing Method Thereof
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US120466472024Semiconductor Device and Fabrication Method Thereof
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US120402442024Nitride Semiconductor Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US120402592024Iii-nitride-based Semiconductor Packaged Structure and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., Ltd.
0 cites - US120403942024Semiconductor Device Having Improved Gate Leakage Current
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US120276152024Semiconductor Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US120211222024Semiconductor Device and Manufacturing Method Thereof
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US120211242024Semiconductor Structures and Methods of Manufacturing the Same
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US120093962024Semiconductor Device with Multichannel Heterostructure and Manufacturing Method Thereof
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US119844962024Semiconductor Device with Multichannel Heterostructure and Manufacturing Method Thereof
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US119619022024Semiconductor Device with Multichannel Heterostructure and Manufacturing Method Thereof
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US119425252024Semiconductor Device with Multichannel Heterostructure and Manufacturing Method Thereof
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US119294292024Nitride-based Semiconductor Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US118880542024Semiconductor Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US118698872024Semiconductor Device and Manufacturing Method Thereof0 cites
- US118376332023Semiconductor Device and Manufacturing Method Therefor
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US117842212023Semiconductor Device and Manufacturing Method Therefor
INNOSCIENC (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US117698262023Semiconductor Device with Asymmetric Gate Structure
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US117217292023Semiconductor Device and Fabrication Method Thereof
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US115693582023Semiconductor Device and Fabrication Method Thereof
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US115693592023Semiconductor Device and Fabrication Method Thereof
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites