30 Patents
- US125934492026Vertical Nonvolatile Memory Device Including Gate Electrodes with Metal-doped Graphene
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US125060742025Interconnect Structure to Reduce Contact Resistance, Electronic Device Including the Same, and Method of Manufacturing the Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - US124215982025Nanocrystalline Graphene and Method of Forming Nanocrystalline Graphene
Samsung Electronics Co., Ltd.
0 cites - US124009752025Interconnect Structure and Electronic Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US123896302025Vertical Channel Transistor Including a Graphene Insertion Layer Beweeen a Source/drain Electrode and a Channel Pattern
Samsung Electronics Co., Ltd.
0 cites - US123781202025Wiring Including Graphene Layer and Method of Manufacturing the Same
Seoul National University R&DB Foundation
0 cites - US123693592025Thin Film Structure and Electronic Device Including Two-dimensional Material
Samsung Electronics Co., Ltd.
0 cites - US123410632025Interconnect Structure, Electronic Device Including the Same, and Method of Manufacturing Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - US122179582025Method of Pre-treating Substrate and Method of Directly Forming Graphene Using the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US121991652025Semiconductor Device and Electronic Apparatus Including the Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites - US121835822024Film Deposition Method and Element Including Film Deposited by the Film Deposition Method
Samsung Electronics Co., Ltd.
0 cites - US121837802024Metal-to-semiconductor Contact Including a 2D Crystal Material Layer
Samsung Electronics Co., Ltd.
0 cites - US121837832024Stacked Structure Including Two-dimensional Material and Method of Fabricating the Stacked Structure
Samsung Electronics Co., Ltd.
0 cites - US121319052024Graphene Structure and Method of Forming the Graphene Structure
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US120878402024Semiconductor Device and Capacitor Including Hydrogen-incorporated Oxide Layer
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US120275892024Semiconductor Device Including Graphene and Method of Manufacturing the Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites - US120149912024Interconnect Structure Including Graphene-metal Barrier and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US119787042024Wiring Structure and Electronic Device Employing the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US118878502024Method of Forming Carbon Layer and Method of Forming Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - 0 cites
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- US116826222023Interconnect Structure Having Nanocrystalline Graphene Cap Layer and Electronic Device Including the Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - US116262822023Graphene Structure and Method of Forming Graphene Structure
Samsung Electronics Co., Ltd.
0 cites - US116265022023Interconnect Structure to Reduce Contact Resistance, Electronic Device Including the Same, and Method of Manufacturing the Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - 0 cites