Kenji Iso

4 Patents

• US124761082025

  Gan Substrate Wafer and Production Method for Same

  MITSUBISHI CHEMICAL CORPORATION

  0 cites
• US123519432025

  N-type Gan Crystal, Gan Wafer, and Gan Crystal, Gan Wafer and Nitride Semiconductor Device Production Method

  MITSUBISHI CHEMICAL CORPORATION

  0 cites
• US122886862025

  Gan Substrate Wafer and Method for Manufacturing Same

  MITSUBISHI CHEMICAL CORPORATION

  0 cites
• US119879032024

  N-type Gan Crystal, Gan Wafer, and Gan Crystal, Gan Wafer and Nitride Semiconductor Device Production Method

  MITSUBISHI CHEMICAL CORPORATION

  0 cites