Kazutaka Yoshizawa

3 Patents

• US124577862025

  High Voltage Field Effect Transistors with Different Sidewall Spacer Configurations and Method of Making the Same

  Sandisk Technologies, Inc.

  0 cites
• US123567042025

  Field Effect Transistor with Contact via Structures That Are Laterally Spaced by a Sub-lithographic Distance and Method of Making the Same

  Sandisk Technologies, Inc.

  0 cites
• US120328372024

  Non-volatile Memory with Reduced Word Line Switch Area

  Sandisk Technologies LLC

  0 cites