Patents/Inventors

Kazuo Nakajima

HsinchuTW1 patent

3 Patents

US121632472024
Method for Producing Silicon Ingot Single Crystal
Globalwafers Co., Ltd.
0 cites
US120376962024
Method for Producing Si Ingot Single Crystal, Si Ingot Single Crystal, and Apparatus Thereof
Globalwafers Co., Ltd.
0 cites
US120376972024
Apparatus for Producing Si Ingot Single Crystal
Globalwafers Co., Ltd.
0 cites