3 Patents
- US121071292024Self-standing Gan Substrate, Gan Crystal, Method for Producing Gan Single Crystal, and Method for Producing Semiconductor Device
Mitsubishi Chemical Corporation
0 cites - US116706872023Gallium Nitride Substrate and Manufacturing Method of Nitride Semiconductor Crystal
MITSUBISHI CHEMICAL CORPORATION
0 cites - US116644282023Self-standing Gan Substrate, Gan Crystal, Method for Producing Gan Single Crystal, and Method for Producing Semiconductor Device
Mitsubishi Chemical Corporation
0 cites