24 Patents
- US125387122026Magnetoresistive Effect Element and Crystallization Method of Ferromagnetic Layer
TDK CORPORATION
0 cites - US125075982025Magnetoresistance Effect Element with Layers Containing Crystallized Co Heusler Alloy
TDK CORPORATION
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- US122885762025Magnetoresistance Effect Element, Magnetic Recording Element, and High-frequency Device
TDK CORPORATION
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- US120638732024Tunnel Barrier Layer, Magnetoresistance Effect Element, and Method for Manufacturing Tunnel Barrier Layer
TDK CORPORATION
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- US119673482024Magnetoresistance Effect Element Containing Heusler Alloy with Additive Element
TDK CORPORATION
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- US118407572023Film Deposition System, Factory System, and Method of Depositing Film on Wafer
TDK CORPORATION
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- US117300632023Magnetoresistive Effect Element Including a Heusler Alloy Layer with a Crystal Region and an Amorphous Region
TDK CORPORATION
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- US116213922023Magnetoresistance Effect Element Including a Crystallized Co Heusler Alloy Layer
TDK CORPORATION
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- US115946742023Tunnel Barrier Layer, Magnetoresistance Effect Element, Method for Manufacturing Tunnel Barrier Layer, and Insulating Layer
TDK CORPORATION
0 cites - US115858732023Magnetoresistive Effect Element Containing Two Non-magnetic Layers with Different Crystal Structures
NATIONAL INSTITUTE FOR MATERIALS SCIENCE
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