Patents/Inventors

Karthik Sarpatwari

Boise, IDUS52 patents

49 Patents

US126045202026
Microelectronic Devices Including Vertical Inverters, and Electronic Systems
Micron Technology, Inc.
0 cites
US125370542026
Identify the Programming Mode of Memory Cells Based on Cell Statistics Obtained During Reading of the Memory Cells
Micron Technology, Inc.
0 cites
US124842082025
Memory Device Having Tiers of 2-transistor Memory Cells and Charge Storage Structure Having Multiple Portions
Micron Technology, Inc.
0 cites
US124328982025
Memory Device Having Tiers of 2-transistor Memory Cells
Micron Technology, Inc.
0 cites
US123619772025
Memory Device Having Shared Read/write Data Line for 2-transistor Vertical Memory Cell
Micron Technology, Inc.
0 cites
US123493352025
Memory Device Having 2-transistor Vertical Memory Cell and Shared Channel Region
Micron Technology, Inc.
0 cites
US122666602025
Memory Device Having 2-transistor Memory Cell and Access Line Plate
Micron Technology, Inc.
0 cites
US122197502025
Memory Device Having 2-transistor Vertical Memory Cell and Separate Read and Write Gates
Micron Technology, Inc.
0 cites
US121760292024
Drift Aware Read Operations
Micron Technology, Inc.
0 cites
US121068032024
Multi-step Pre-read for Write Operations in Memory Devices
Micron Technology, Inc.
0 cites
US121019462024
Integrated Assemblies Comprising Hydrogen Diffused Within Two or More Different Semiconductor Materials, and Methods of Forming Integrated Assemblies
Micron Technology, Inc.
0 cites
US120803312024
Memory Device Having 2-transistor Vertical Memory Cell and Shield Structures
Micron Technology, Inc.
0 cites
US120803592024
Identify the Programming Mode of Memory Cells During Reading of the Memory Cells
Micron Technology, Inc.
0 cites
US120698532024
Memory Device Having Shared Access Line for 2-transistor Vertical Memory Cell
Micron Technology, Inc.
0 cites
US120147842024
Evaluation of Background Leakage to Select Write Voltage in Memory Devices
Micron Technology, Inc.
0 cites
US119858062024
Vertical 2-transistor Memory Cell
Micron Technology, Inc.
0 cites
US119504022024
Memory Device Having 2-transistor Vertical Memory Cell and Shield Structures
Micron Technology, Inc.
0 cites
US119504262024
Memory Device Having 2-transistor Vertical Memory Cell and Wrapped Data Line Structure
Micron Technology, Inc.
0 cites
US119421362024
Memory Device Having Shared Read/write Access Line for 2-transistor Vertical Memory Cell
Micron Technology, Inc.
0 cites
US119421392024
Performing Refresh Operations on Memory Cells
Micron Technology, Inc.
0 cites
US119230072024
Dirty Write on Power Off
Micron Technology, Inc.
0 cites
US118940782024
Accessing a Multi-level Memory Cell
Micron Technology, Inc.
0 cites
US118758672024
Weighted Wear Leveling for Improving Uniformity
Micron Technology, Inc.
0 cites
US118715892024
Memory Device Having 2-transistor Memory Cell and Access Line Plate
Micron Technology, Inc.
0 cites
US118622262024
Systems and Methods for Pre-read Scan of Memory Devices
Micron Technology, Inc.
0 cites
US118324542023
Integrated Assemblies Comprising Hydrogen Diffused Within Two or More Different Semiconductor Materials, and Methods of Forming Integrated Assemblies
Micron Technology, Inc.
0 cites
US117913912023
Inverters, and Related Memory Devices and Electronic Systems
Micron Technology, Inc.
0 cites
US117828302023
Cache Memory with Randomized Eviction
Micron Technologies, Inc.
0 cites
US117839022023
Multi-state Programming of Memory Cells
Micron Technology, Inc.
0 cites
US117754312023
Cache Memory with Randomized Eviction
Micron Technologies, Inc.
0 cites
US117769072023
Memory Device Having 2-transistor Vertical Memory Cell and a Common Plate
Micron Technology, Inc.
0 cites
US117788062023
Memory Device Having 2-transistor Vertical Memory Cell and Separate Read and Write Gates
Micron Technology, Inc.
0 cites
US117352582023
Increase of a Sense Current in Memory
Micron Technology, Inc.
0 cites
US117279832023
Single Word Line Gain Cell with Complementary Read Write Channel
Micron Technology, Inc.
0 cites
US117280052023
Bipolar Read Retry
Micron Technology, Inc.
0 cites
US117105282023
Data-based Polarity Write Operations
Micron Technology, Inc.
0 cites
US116947472023
Self-selecting Memory Cells Configured to Store More Than One Bit per Memory Cell
Micron Technology, Inc.
0 cites
US116884502023
Memory Device Having 2-transistor Vertical Memory Cell and Shield Structures
Micron Technology, Inc.
0 cites
US116640732023
Adaptively Programming Memory Cells in Different Modes to Optimize Performance
Micron Technology, Inc.
0 cites
US116640742023
Programming Intermediate State to Store Data in Self-selecting Memory Cells
Micron Technology, Inc.
0 cites
US116658802023
Memory Device Having 2-transistor Vertical Memory Cell and a Common Plate
Micron Technology, Inc.
0 cites
US116534892023
Memory Device Having 2-transistor Vertical Memory Cell and Shield Structures
Micron Technology, Inc.
0 cites
US116314532023
Vertical 3D Single Word Line Gain Cell with Shared Read/write Bit Line
Micron Technology, Inc.
0 cites
US116158542023
Identify the Programming Mode of Memory Cells During Reading of the Memory Cells
Micron Technology, Inc.
0 cites
US116160732023
Memory Device Having 2-transistor Vertical Memory Cell and Wrapped Data Line Structure
Micron Technology, Inc.
0 cites
US116160982023
Three-dimensional Memory Arrays, and Methods of Forming the Same
Micron Technology, Inc.
0 cites
US115689522023
Adjustable Programming Pulses for a Multi-level Cell
Micron Technology, Inc.
0 cites
US115451942023
Dynamic Read Voltage Techniques
Micron Technology, Inc.
0 cites
US115452162023
Mitigation of Voltage Threshold Drift Associated with Power Down Condition of Non-volatile Memory Device
Micron Technology, Inc.
0 cites