6 Patents
- US125504012026Doped STI to Reduce Source/drain Diffusion for Germanium NMOS Transistors
Intel Corporation
0 cites - US124190912025Source Electrode and Drain Electrode Protection for Nanowire Transistors
Intel Corporation
0 cites - 0 cites
- US117356702023Non-selective Epitaxial Source/drain Deposition to Reduce Dopant Diffusion for Germanium NMOS Transistors
Intel Corporation
0 cites - 0 cites
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