3 Patents
- US124630882025Selective Etches for Reducing Cone Formation in Shallow Trench Isolations
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0 cites - US119787902024Normally-on Gallium Nitride Based Transistor with P-type Gate
TEXAS INSTRUMENTS INCORPORATED
0 cites - US119087292024Selective Etches for Reducing Cone Formation in Shallow Trench Isolations
TEXAS INSTRUMENTS INCORPORATED
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