3 Patents
- US125123242025Selective Formation of Titanium Silicide and Titanium Nitride by Hydrogen Gas Control
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US121703312024Conductive Structures and Methods of Formation
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119729512024Selective Formation of Titanium Silicide and Titanium Nitride by Hydrogen Gas Control
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites