228 Patents
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International Business Machines Corporation
0 cites - 0 cites
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- US126107532026Stacked Resistive Random-access Memory Cross-point Cell
International Business Machines Corporation
0 cites - US126046742026Back Side Phase Change Memory (PCM) with PCM Back Side Source/drain Contact Structure
International Business Machines Corporation
0 cites - US125934572026Multi-state Ferroelectric-ram with Stacked Capacitors
International Business Machines Corporation
0 cites - US125817192026Fabrication of Silicon Germanium Channel and Silicon/silicon Germanium Dual Channel Field-effect Transistors
International Business Machines Corporation
0 cites - US125751602026Backside and Frontside Contacts for Semiconductor Device
International Business Machines Corporation
0 cites - US125686832026Single Stack Dual Channel Gate-all-around Nanosheet with Strained PFET and Bottom Dielectric Isolation NFET
International Business Machines Corporation
0 cites - US125622252026Hybrid Memory for Neuromorphic Applications
International Business Machines Corporation
0 cites - US125575642026Memory Cell with a Variable Element and a Phase Change Memory
International Business Machines Corporation
0 cites - US125573562026Semiconductor Structure with Fully Wrapped-around Backside Contact
International Business Machines Corporation
0 cites - US125575652026Phase Change Memory with Reduced Programming Current
International Business Machines Corporation
0 cites - US125506292026Self-aligned, Symmetric Phase Change Memory Element
International Business Machines Corporation
0 cites - US125503382026Three Dimensional Cross-point Non-volatile Memory
International Business Machines Corporation
0 cites - 0 cites
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- US125504272026Vertical Inverter Formation on Stacked Field Effect Transistor (SFET)
International Business Machines Corporation
0 cites - 0 cites
- US125326822026Method of Manufacturing a Structure by Asymmetrical Ion Bombardment of a Capped Underlying Layer
Adeia Semiconductor Solutions LLC
0 cites - US125139802025Stacked Vertical Transport Field Effect Transistor with Anchors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US125139852025CFET with Independent Gate Control and Low Parasitic Capacitance
International Business Machines Corporation
0 cites - US124955872025Self-aligned Contact (SAC) in Nanosheet Transistors
International Business Machines Corporation
0 cites - US124890532025Interconnect Structure Including Patterned Metal Lines
International Business Machines Corporation
0 cites - US124842502025Horizontally Stacked Nanosheet Gate All Around Device Structure
International Business Machines Corporation
0 cites - US124777792025Gate-all-around Field-effect-transistor with Wrap-around-channel Inner Spacer
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - 0 cites
- US124715062025Phase-change Memory Cell with Reduced Heater Size
International Businesss Machines Corporation
0 cites - US124531762025Heterogeneous Gate All Around Dielectric Thickness
International Business Machines Corporation
0 cites - US124532942025Multi-level Programming of Phase Change Memory Device
International Business Machines Corporation
0 cites - US124532962025Phase-change Memory Device with Conductive Cladding
International Business Machines Corporation
0 cites - US124462322025Mram-based Chip Identification with Free Random Programming
International Business Machines Corporation
0 cites - 0 cites
- US124396722025Semiconductor Backside Contact Structure with Increased Contact Area
International Business Machines Corporation
0 cites - US124396312025Non-self-aligned Wrap-around Contact in a Tight Gate Pitched Transistor
International Business Machines Corporation
0 cites - 0 cites
- US124329682025Nanowire Source/drain Formation for Nanosheet Device
International Business Machines Corporation
0 cites - US124314692025Vertically Stacked FET with Strained Channel
International Business Machines Corporation
0 cites - US124263142025Strain Generation and Anchoring in Gate-all-around Field Effect Transistors
International Business Machines Corporation
0 cites - US124263382025Buried Power Rail with Robust Connection to a Wrap Around Contact
International Business Machines Corporation
0 cites - US124190802025Semiconductor Structure with Wrapped-around Backside Contact
International Business Machines Corporation
0 cites - 0 cites
- US124075322025Gain Cell Memory Based Physically Unclonable Function
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - 0 cites
- 0 cites
- US123962252025Method to Release Nano Sheet After Nano Sheet Fin Recess
International Business Machines Corporation
0 cites - US123962472025Work Function Metal Patterning for Nanosheet Cfets
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US123896092025Circuit Architecture Using Transistors with Dynamic Dual Functionality for Logic and Embedded Memory Drivers
International Business Machines Corporation
0 cites - 0 cites
- US123827082025Vertical Stacked Nanosheet CMOS Transistors with Different Work Function Metals
International Business Machines Corporation
0 cites - US123827192025Power Gating Dummy Power Transistors for Back Side Power Delivery Networks
International Business Machines Corporation
0 cites - US123826622025Wrap-around-contact for 2d-channel Gate-all-around Field-effect-transistors
International Business Machines Corporation
0 cites - US123826652025Increased Gate Length at Given Footprint for Nanosheet Device
International Business Machines Corporation
0 cites - 0 cites
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- US123639772025Forming Dielectric Sidewall and Bottom Dielectric Isolation in Fork-fet Devices
International Business Machines Corporation
0 cites - US123566802025Nanosheet Device with Air-gaped Source/drain Regions
International Business Machines Corporation
0 cites - US123494572025Stacked Transistors Having Bottom Contact with Replacement Spacer
International Business Machines Corporation
0 cites - 0 cites
- US123362792025Fin Stack Including Tensile-strained and Compressively Strained Fin Portions
International Business Machines Corporation
0 cites - 0 cites
- US123289162025Cpp-agnostic Source-drain Contact Formation for Gate-all-around Devices with Dielectric Isolation
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US123242342025Fork Sheet Device with Better Electrostatic Control
International Business Machines Corporation
0 cites - US123241842025Replacement Gate Cross-couple for Static Random-access Memory Scaling
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - 0 cites
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- US123175092025Stacked Spin-orbit-torque Magnetoresistive Random-access Memory
International Business Machines Corporation
0 cites - US123175142025Resistive Random-access Memory Structures with Stacked Transistors
International Business Machines Corporation
0 cites - US123102622025Phase Change Memory with Encapsulated Phase Change Element
International Business Machines Corporation
0 cites - US123102652025Dome-shaped Phase Change Memory Mushroom Cell
International Business Machines Corporation
0 cites - 0 cites
- US123100612025Nanosheet Transistor Devices with Different Active Channel Widths
International Business Machines Corporation
0 cites - US123100642025Isolation Pillar Structures for Stacked Device Structures
International Business Machines Corporation
0 cites - US122794522025Stacked Complementary Transistor Structure for Three-dimensional Integration
International Business Machines Corporation
0 cites - 0 cites
- US122741852025Phase Change Memory Cell Having Pillar Bottom Electrode with Improved Thermal Insulation
International Business Machines Corporation
0 cites - US122625492025Transistor Device Having a Comb-shaped Channel Region to Increase the Effective Gate Width
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US122566532025PCM Cell with Nanoheater Surrounded with Airgaps
International Business Machines Corporation
0 cites - US122565542025Embedded MRAM Integrated with Super via and Dummy Fill
International Business Machines Corporation
0 cites - US122556512025Reconfigurable Ring Oscillator (RO) Physical Unclonable Function (PUF)
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - 0 cites
- US122455302025Phase Change Memory with Concentric Ring-shaped Heater
International Business Machines Corporation
0 cites - 0 cites
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- US122242032025Air Gap Spacer Formation for Nano-scale Semiconductor Devices
Adeia Semiconductor Solutions LLC
0 cites - US122198852025Reducing Contact Resistance of Phase Change Memory Bridge Cell
International Business Machines Corporation
0 cites - 0 cites
- US122118482025Field Effect Transistors Comprising a Matrix of Gate-all-around Channels
International Business Machines Corporation
0 cites - 0 cites
- 0 cites
- US122075702025Phase Change Memory with Multi-level Programming
International Business Machines Corporation
0 cites - US121912082025Dual Strained Semiconductor Substrate and Patterning
International Business Machines Corporation
0 cites - 0 cites
- US121764162024Stacked Nanosheet Transistor with Defect Free Channel
International Business Machines Corporation
0 cites - 0 cites
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- US121549712024Forming Nanosheet Transistor Using Sacrificial Spacer and Inner Spacers
Adeia Semiconductor Solutions LLC
0 cites - 0 cites
- 0 cites
- US121366562024Semiconductor Structure Having Two-dimensional Channel
International Business Machines Corporation
0 cites - US121365732024Fabrication of a Vertical Fin Field Effect Transistor with Reduced Dimensional Variations
Adeia Semiconductor Solutions LLC
0 cites - US121366552024Backside Electrical Contacts to Buried Power Rails
International Business Machines Corporation
0 cites - US121320982024Uniform Interfacial Layer on Vertical Fin Sidewalls of Vertical Transport Field-effect Transistors
International Business Machines Corporation
0 cites - US121193462024Vertical Field-effect Transistor with Wrap-around Contact Structure
International Business Machines Corporation
0 cites - US121127822024Compact MRAM Architecture with Magnetic Bottom Electrode
International Business Machines Corporation
0 cites - US121130672024Forming N-type and P-type Horizontal Gate-all-around Devices
International Business Machines Corporation
0 cites - US121071322024Source/drain Contact Positioning Under Power Rail
International Business Machines Corporation
0 cites - 0 cites
- US121070142024Nanosheet Transistors with Self-aligned Gate Cut
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US121069692024Substrate Thinning for a Backside Power Distribution Network
International Business Machines Corporation
0 cites - US120949492024Fin-type Field Effect Transistor Having a Wrap-around Gate with Bottom Isolation and Inner Spacers to Reduce Parasitic Capacitance
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US120949722024Gate-all-around Field Effect Transistors Having End Portions of Nanosheet Channel Layers Adjacent to Source/drain Regions Being Wider Than the Center Portions
Globalfoundries U.S. Inc.
0 cites - US120877702024Complementary Field Effect Transistor Devices
International Business Machines Corporation
0 cites - US120876912024Semiconductor Structures with Backside Gate Contacts
International Business Machines Corporation
0 cites - US120807142024Buried Local Interconnect Between Complementary Field-effect Transistor Cells
International Business Machines Corporation
0 cites - US120466432024Semiconductor Structures with Power Rail Disposed Under Active Gate
International Business Machines Corporation
0 cites - US120272242024Authenticity and Yield by Reading Defective Cells
International Business Machines Corporation
0 cites - US120028502024Nanosheet-based Semiconductor Structure with Dielectric Pillar
International Business Machines Corporation
0 cites - 0 cites
- US120027532024Electronic Fuse with Passive Two-terminal Phase Change Material and Method of Fabrication
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US119964802024Vertical Transistor with Late Source/drain Epitaxy
International Business Machines Corporation
0 cites - US119787962024Contact and Isolation in Monolithically Stacked VTFET
International Business Machines Corporation
0 cites - US119787832024Vertical Fin Field Effect Transistor Devices with Reduced Top Source/drain Variability and Lower Resistance
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - 0 cites
- US119637742024Method Probe with High Density Electrodes, and a Formation Thereof
International Business Machines Corporation
0 cites - US119634692024Phase Change Memory Cell with an Airgap to Allow for the Expansion and Restriction of the PCM Material
International Business Machines Corporation
0 cites - US119615442024Spin-orbit Torque (SOT) Magnetoresistive Random-access Memory (MRAM) with Low Resistivity Spin Hall Effect (SHE) Write Line
International Business Machines Corporation
0 cites - 0 cites
- US119555262024Thick Gate Oxide Device Option for Nanosheet Device
International Business Machines Corporation
0 cites - US119423742024Nanosheet Field Effect Transistor with a Source Drain Epitaxy Replacement
International Business Machines Corporation
0 cites - US119375222024Confining Filament at Pillar Center for Memory Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US119359302024Wrap-around-contact for 2d-channel Gate-all-around Field-effect-transistors
International Business Machines Corporation
0 cites - US119375212024Structure and Method to Fabricate Resistive Memory with Vertical Pre-determined Filament
International Business Machines Corporation
0 cites - US119234382024Field-effect Transistor with Punchthrough Stop Region
International Business Machines Corporation
0 cites - US119233632024Semiconductor Structure Having Bottom Isolation and Enhanced Carrier Mobility
International Business Machines Corporation
0 cites - US119160732024Stacked Complementary Field Effect Transistors
International Business Machines Corporation
0 cites - US119089372024Vertical Transport Field-effect Transistor with Ring-shaped Wrap-around Contact
International Business Machines Corporation
0 cites - US119088902024Isolation Structure for Stacked Vertical Transistors
International Business Machines Corporation
0 cites - 0 cites
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- US118944332024Method and Structure to Improve Stacked FET Bottom EPI Contact
International Business Machines Corporation
0 cites - 0 cites
- US118826952024Vertical Field Effect Transistor Including Integrated Antifuse
Samsung Electronics Co., Ltd.
0 cites - US118827722024Conductive-bridging Semiconductor Memory Device Formed by Selective Deposition
International Business Machines Corporation
0 cites - US118761362024Transistor Having Wrap-around Source/drain Contacts and Under-contact Spacers
International Business Machine Corporation
0 cites - 0 cites
- US118761172024Field Effect Transistor with Reduced Parasitic Capacitance and Resistance
International Business Machines Corporation
0 cites - 0 cites
- US118695612024Spin Orbit-torque Magnetic Random-access Memory (SOT-MRAM) with Cross-point Spin Hall Effect (SHE) Write Lines and Remote Sensing Read Magnetic Tunnel-junction (MTJ)
International Business Machines Corporation
0 cites - US118483842023Semiconductor Device with Airgap Spacer Formation from Backside of Wafer
International Business Machines Corporation
0 cites - 0 cites
- US118430312023Short Gate on Active and Longer Gate on STI for Nanosheets
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US118376042023Forming Stacked Nanosheet Semiconductor Devices with Optimal Crystalline Orientations Around Devices
International Business Machine Corporation
0 cites - US118309462023Bottom Source/drain for Fin Field Effect Transistors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - 0 cites
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- US118126752023Filament Confinement in Resistive Random Access Memory
International Business Machines Corporation
0 cites - US118057042023Via Interconnects for a Magnetoresistive Random-access Memory Device
International Business Machines Corporation
0 cites - 0 cites
- US117988512023Work Function Metal Patterning for Nanosheet Cfets
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US117913962023Field Effect Transistor with Multiple Gate Dielectrics and Dual Work-functions with Precisely Controlled Gate Lengths
International Business Machines Corporation
0 cites - US117911992023Nanosheet IC Device with Single Diffusion Break
International Business Machines Corporation
0 cites - US117913422023Varactor Integrated with Complementary Metal-oxide Semiconductor Devices
International Business Machines Corporation
0 cites - US117841252023Wrap Around Cross-couple Contact Structure with Enhanced Gate Contact Size
International Business Machines Corporation
0 cites - 0 cites
- US117840952023Fabrication of a Vertical Fin Field Effect Transistor with Reduced Dimensional Variations
Adeia Semiconductor Solutions LLC
0 cites - US117769562023III-V Fins by Aspect Ratio Trapping and Self-aligned Etch to Remove Rough Epitaxy Surface
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US117772752023Augmented Semiconductor Lasers with Spontaneous Emissions Blockage
International Business Machines Corporation
0 cites - 0 cites
- US117642592023Vertical Field-effect Transistor with Dielectric Fin Extension
International Business Machines Corporation
0 cites - US117569572023Reducing Gate Resistance in Stacked Vertical Transport Field Effect Transistors
International Business Machines Corporation
0 cites - US117389952023Manipulation of a Molecule Using Dipole Moments
International Business Machines Corporation
0 cites - US117428362023Random Number Generator Using Cross-coupled Ring Oscillators
International Business Machines Corporation
0 cites - US117356582023Tunnel Field-effect Transistor with Reduced Subthreshold Swing
International Business Machines Corporation
0 cites - US117355902023Fin Stack Including Tensile-strained and Compressively Strained Fin Portions
International Business Machines Corporation
0 cites - 0 cites
- US117283402023Single Diffusion Break Isolation for Gate-all-around Field-effect Transistor Devices
International Business Machines Corporation
0 cites - US117284282023Dielectric Isolated Fin with Improved Fin Profile
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US117106992023Complementary FET (CFET) Buried Sidewall Contact with Spacer Foot
International Business Machines Corporation
0 cites - US117055172023Nanosheet Transistors with Strained Channel Regions
International Business Machines Corporation
0 cites - US117055042023Stacked Nanosheet Transistor with Defect Free Channel
International Business Machines Corporation
0 cites - 0 cites
- US116950382023Forming Single and Double Diffusion Breaks for Fin Field-effect Transistor Structures
International Business Machines Corporation
0 cites - US116903052023Phase Change Memory Cell with an Airgap to Allow for the Expansion and Restriction of the PCM Material
International Business Machines Corporation
0 cites - US116886262023Nanosheet Transistor with Self-aligned Dielectric Pillar
International Business Machines Corporation
0 cites - US116887752023Method of Forming First and Second Contacts Self-aligned Top Source/drain Region of a Vertical Field-effect Transistor
International Business Machines Corporation
0 cites - 0 cites
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- US116826742023Stacked Nanosheet Complementary Metal Oxide Semiconductor Field Effect Transistor Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US116825822023Field Effect Transistor Devices with Self-aligned Source/drain Contacts and Gate Contacts Positioned Over Active Transistors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US116770262023Transistor Having Wrap-around Source/drain Contacts
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - 0 cites
- US116737662023Elevator Analytics Facilitating Passenger Destination Prediction and Resource Optimization
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US116659872023Integrated Switch Using Stacked Phase Change Materials
International Business Machines Corporation
0 cites - 0 cites
- US116644222023Nanosheet Transistor with Ultra Low-k Spacer and Improved Patterning Robustness
International Business Machines Corporation
0 cites - 0 cites
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- US116521562023Nanosheet Transistor with Asymmetric Gate Stack
International Business Machines Corporation
0 cites - US116462352023Vertical Tunneling Field Effect Transistor with Dual Liner Bottom Spacer
International Business Machines Corporation
0 cites - US116372382023Resistive Random-access Memory Cell and Manufacturing Method Thereof
International Business Machines Corporation
0 cites - US116371792023Airgap Vertical Transistor Without Structural Collapse
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US116370412023Method of Forming High Mobility Complementary Metal-oxide-semiconductor (CMOS) Devices with Fins on Insulator
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - 0 cites
- US116263222023Interconnects with Tight Pitch and Reduced Resistance
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US116262872023Semiconductor Device with Improved Contact Resistance and via Connectivity
International Business Machines Corporation
0 cites - US116213482023Vertical Transistor Devices with Composite High-k and Low-k Spacers with a Controlled Top Junction
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - 0 cites
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- US116056722023Steep-switch Field Effect Transistor with Integrated Bi-stable Resistive System
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - 0 cites
- US115881042023Resistive Memory with Vertical Transport Transistor
International Business Machines Corporation
0 cites - US115879782023Phase Change Memory with Improved Recovery from Element Segregation
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US115811902023Method of Fabricating Semiconductor Fins by Differentially Oxidizing Mandrel Sidewalls
TESSERA LLC
0 cites - US115750422023Tunnel Field-effect Transistor with Reduced Subthreshold Swing
International Business Machines Corporation
0 cites - US115748442023Fabrication of a Vertical Fin Field Effect Transistor with Reduced Dimensional Variations
TESSERA LLC
0 cites - 0 cites
- US115693662023Fully Depleted SOI Transistor with a Buried Ferroelectric Layer in Back-gate
International Business Machines Corporation
0 cites - US115692292023Stacked Vertical Transport Field Effect Transistors with Anchors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US115693612023Nanosheet Transistors with Wrap Around Contact
International Business Machines Corporation
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