46 Patents
- US126157672026Multi-stack Nanosheet Structure Including Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US126108072026Integrated Circuit Devices Including a Back Side Power Distribution Network Structure and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US125936742026Semiconductor Transistor Device Including Backside Contact Structure Vertically Between Backside Power Rail and Source/drain Structure and Method of Forming Thereof
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US125884892026Integrated Circuit Devices Including Stacked Elements and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US1257514720263d-stacked Transistor Structure with Barrier Layer Between Upper Gate Structure and Lower Gate Structure
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US125640362026Integrated Circuit Devices Including via Structures Having a Narrow Upper Portion, and Related Fabrication Methods
Samsung Electronics Co., Ltd.
0 cites - US125433472026Different Diffusion Break Structures for Three-dimensional Stacked Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US125433802026Integrated Circuit Devices Including Stacked Transistors and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US124944302025Integrated Circuit Devices Including Lower Interconnect Metal Layers at Cell Boundaries and Methods of Forming the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US124905022025Bipolar Junction Transistors and P-N Junction Diodes Including Stacked Nano-semiconductor Layers
Samsung Electronics Co., Ltd.
0 cites - US124904912025Integrated Circuit Devices Including a Back Side Power Distribution Network Structure and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US124713652025Semiconductor Device Including Bottom Isolation Structure for Preventing Current Leakage
Samsung Electronics Co., Ltd.
0 cites - US124631362025Integrated Circuit Devices Including Backside Power Rail and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US123962532025Integrated Circuit Devices Including Stacked Field Effect Transistors and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US123947042025Semiconductor Device Including Interconnect Structure with Metal Bridge Pattern Connecting Adjacent Metal Lines
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123896602025Semiconductor Device Including Backside Contact Structure with Silicide Layer Formed in FEOL Process
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123640182025Limited Lateral Growth of S/D Epi by Outer Dielectric Layer in 3-dimensional Stacked Device
Samsung Electronics Co., Ltd.
0 cites - US123566892025Transistor Stacks Having Insulating Spacers, and Related Fabrication Methods
Samsung Electronics Co., Ltd.
0 cites - US123566652025Stacked Transistors Having an Isolation Region Therebetween and a Common Gate Electrode, and Related Fabrication Methods
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123477742025Integrated Circuit Devices Including Metal Lines Spaced Apart from Metal Vias, and Related Fabrication Methods
Samsung Electronics Co., Ltd.
0 cites - US123362832025Three-dimensional Stacked Semiconductor Device Including Simplified Source/drain Contact Area
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123175822025Integrated Circuit Devices Including a Metal Resistor and Methods of Forming the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123175882025Step-stacked Nanowire CMOS Structure for Low Power Logic Device and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US123100622025Integrated Circuit Devices Including Stacked Transistors and Methods of Forming the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US122781682025Semiconductor Device Including Interconnect Structure with Planarization Stop Layer
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
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- US122552482025Semiconductor Device Including Backside Contact Structure Having Positive Slope and Method of Forming Thereof
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122496032025Resistor Structures of Integrated Circuit Devices Including Stacked Transistors and Methods of Forming the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122305712025Integrated Circuit Devices Including a Power Rail and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US122305702025Integrated Circuit with Buried Power Rail and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US122243142025Size-controllable Multi-stack Semiconductor Device and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122118372025Semiconductor Device Including Gate Contact Structure Formed from Gate Structure
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122009202025Integrated Circuit Devices Including a Power Distribution Network and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US121837862024Multi-stack Semiconductor Device with Zebra Nanosheet Structure
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US121193512024Semiconductor Device Having Fin-type Field Effect Transistor and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US120948692024Diode Structures of Stacked Devices and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US120876692024Integrated Circuit Devices Including Discharging Path and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
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- US117642072023Diode Structures of Stacked Devices and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US116887422023Different Diffusion Break Structures for Three-dimensional Stacked Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites