Patents/Inventors

Kamal M. Karda

Boise, IDUS65 patents

62 Patents

US126045202026
Microelectronic Devices Including Vertical Inverters, and Electronic Systems
Micron Technology, Inc.
0 cites
US125074002025
Vertically Stacked Storage Nodes and Access Devices with Horizontal Access Lines
Micron Technology, Inc.
0 cites
US124842082025
Memory Device Having Tiers of 2-transistor Memory Cells and Charge Storage Structure Having Multiple Portions
Micron Technology, Inc.
0 cites
US124577342025
Two Transistor Cells for Vertical Three-dimensional Memory
Micron Technology, Inc.
0 cites
US124396372025
Transistors, Array of Transistors, and Array of Memory Cells Individually Comprising a Transistor
Micron Technology, Inc.
0 cites
US124328982025
Memory Device Having Tiers of 2-transistor Memory Cells
Micron Technology, Inc.
0 cites
US124083882025
Ferroelectric Transistors and Assemblies Comprising Ferroelectric Transistors
Micron Technology, Inc.
0 cites
US123619772025
Memory Device Having Shared Read/write Data Line for 2-transistor Vertical Memory Cell
Micron Technology, Inc.
0 cites
US123493352025
Memory Device Having 2-transistor Vertical Memory Cell and Shared Channel Region
Micron Technology, Inc.
0 cites
US123362882025
Array of Vertical Transistors and Method Used in Forming an Array of Vertical Transistors
Micron Technology, Inc.
0 cites
US122836362025
Devices Including Channel Materials and Passivation Materials
Micron Technology, Inc.
0 cites
US122848052025
String Driver Assemblies Including Two-dimensional Materials, and Related Memory Devices
Lodestar Licensing Group LLC
0 cites
US122666602025
Memory Device Having 2-transistor Memory Cell and Access Line Plate
Micron Technology, Inc.
0 cites
US122565412025
Apparatus and Method Including Memory Device Having 2-transistor Vertical Memory Cell
Micron Technology, Inc.
0 cites
US122182362025
Devices Including Heterogeneous Channels, and Related Memory Devices, Electronic Systems, and Methods
Micron Technology, Inc.
0 cites
US122197502025
Memory Device Having 2-transistor Vertical Memory Cell and Separate Read and Write Gates
Micron Technology, Inc.
0 cites
US122197582025
Integrated Assemblies Having Transistor Body Regions Coupled to Carrier-sink-structures; and Methods of Forming Integrated Assemblies
Micron Technology, Inc.
0 cites
US122197832025
Semiconductor Devices and Hybrid Transistors
Micron Technology, Inc.
0 cites
US122133212025
Memory Device Having 2-transistor Vertical Memory Cell and Conductive Shield Structure
Micron Technology, Inc.
0 cites
US122009282025
Memory Device Having Memory Cell Strings and Separate Read and Write Control Gates
Micron Technology, Inc.
0 cites
US122009382025
Driver Placement in Memories Having Stacked Memory Arrays
0 cites
US121913542025
Vertical Transistors Having at Least 50% Grain Boundaries Offset Between Top and Bottom Source/drain Regions and the Channel Region That Is Vertically Therebetween
Micron Technology, Inc.
0 cites
US121660722024
Channel Conduction in Semiconductor Devices
0 cites
US121192692024
Array of Vertical Transistors Having Channel Regions Connected by an Elongated Conductor Line
Micron Technology, Inc.
0 cites
US121019462024
Integrated Assemblies Comprising Hydrogen Diffused Within Two or More Different Semiconductor Materials, and Methods of Forming Integrated Assemblies
Micron Technology, Inc.
0 cites
US120803312024
Memory Device Having 2-transistor Vertical Memory Cell and Shield Structures
Micron Technology, Inc.
0 cites
US120698532024
Memory Device Having Shared Access Line for 2-transistor Vertical Memory Cell
Micron Technology, Inc.
0 cites
US120404112024
Devices Including Vertical Transistors, and Related Methods
Micron Technology, Inc.
0 cites
US120028892024
Devices Including Channel Materials and Passivation Materials
Micron Technology, Inc.
0 cites
US119858062024
Vertical 2-transistor Memory Cell
Micron Technology, Inc.
0 cites
US119504022024
Memory Device Having 2-transistor Vertical Memory Cell and Shield Structures
Micron Technology, Inc.
0 cites
US119504262024
Memory Device Having 2-transistor Vertical Memory Cell and Wrapped Data Line Structure
Micron Technology, Inc.
0 cites
US119421362024
Memory Device Having Shared Read/write Access Line for 2-transistor Vertical Memory Cell
Micron Technology, Inc.
0 cites
US119439192024
Microelectronic Devices Including Two-dimensional Materials, and Related Memory Devices and Electronic Systems
0 cites
US119359602024
Integrated Assemblies
Micron Technology, Inc.
0 cites
US119089322024
Apparatuses Comprising Vertical Transistors Having Gate Electrodes at Least Partially Recessed Within Channel Regions, and Related Methods and Systems
Micron Technology, Inc.
0 cites
US119089482024
Memory Devices Including Indium-containing Materials, and Related Electronic Systems
Micron Technology, Inc.
0 cites
US119105972024
Integrated Assemblies Having Transistor Body Regions Coupled to Carrier-sink-structures; and Methods of Forming Integrated Assemblies
Micron Technology, Inc.
0 cites
US118715892024
Memory Device Having 2-transistor Memory Cell and Access Line Plate
Micron Technology, Inc.
0 cites
US118567992023
Semiconductor Devices, Hybrid Transistors, and Related Methods
Micron Technology, Inc.
0 cites
US118430552023
Semiconductor Devices Comprising Transistors Having Increased Threshold Voltage and Related Methods and Systems
Micron Technology, Inc.
0 cites
US118324542023
Integrated Assemblies Comprising Hydrogen Diffused Within Two or More Different Semiconductor Materials, and Methods of Forming Integrated Assemblies
Micron Technology, Inc.
0 cites
US118056532023
Driver Placement in Memories Having Stacked Memory Arrays
Micron Technology, Inc.
0 cites
US117913912023
Inverters, and Related Memory Devices and Electronic Systems
Micron Technology, Inc.
0 cites
US117769072023
Memory Device Having 2-transistor Vertical Memory Cell and a Common Plate
Micron Technology, Inc.
0 cites
US117788062023
Memory Device Having 2-transistor Vertical Memory Cell and Separate Read and Write Gates
Micron Technology, Inc.
0 cites
US117695422023
Gate-all-around Floating-gate Field Effect Memory Transistor Constructions Including Ferroelectric Gate Insulator
Micron Technology, Inc
0 cites
US117697952023
Channel Conduction in Semiconductor Devices
Micron Technology, Inc.
0 cites
US117279832023
Single Word Line Gain Cell with Complementary Read Write Channel
Micron Technology, Inc.
0 cites
US117157972023
Ferroelectric Transistors and Assemblies Comprising Ferroelectric Transistors
Micron Technology, Inc.
0 cites
US117105132023
Integrated Assemblies Having Ferroelectric Transistors and Methods of Forming Integrated Assemblies
Micron Technology, Inc.
0 cites
US117069292023
Memory Cells
Micron Technology, Inc.
0 cites
US116884502023
Memory Device Having 2-transistor Vertical Memory Cell and Shield Structures
Micron Technology, Inc.
0 cites
US116658802023
Memory Device Having 2-transistor Vertical Memory Cell and a Common Plate
Micron Technology, Inc.
0 cites
US116582422023
Integrated Assemblies Containing Diffusion Alleviating Two-dimensional Materials
Micron Technology, Inc.
0 cites
US116582462023
Devices Including Vertical Transistors, and Related Methods and Electronic Systems
Micron Technology, Inc.
0 cites
US116534892023
Memory Device Having 2-transistor Vertical Memory Cell and Shield Structures
Micron Technology, Inc.
0 cites
US116417322023
Self-aligned Etch Back for Vertical Three Dimensional (3D) Memory
Micron Technology, Inc.
0 cites
US116314532023
Vertical 3D Single Word Line Gain Cell with Shared Read/write Bit Line
Micron Technology, Inc.
0 cites
US116160732023
Memory Device Having 2-transistor Vertical Memory Cell and Wrapped Data Line Structure
Micron Technology, Inc.
0 cites
US115946442023
Microelectronic Devices Including Passivation Materials, Related Electronic Devices, and Related Methods
Micron Technology, Inc.
0 cites
US115575922023
Gate Noble Metal Nanoparticles
Micron Technology, Inc.
0 cites