3 Patents
- US124888202025Spin-orbit Torque Magnetoresistive Random Access Memory and Method of Operating the Same
INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES
0 cites - US123437112025Semiconductor Material Based on Metal Nanowires and Porous Nitride and Preparation Method Thereof
INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES
0 cites - US119727862024Function Switchable Magnetic Random Access Memory and Method for Manufacturing the Same
INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES
0 cites