14 Patents
- US124532902025Memory Cell, Memory Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124398362025Semiconductor Memory Devices with Electrically Isolated Stacked Bit Lines and Methods of Manufacture
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124314612025System and Method for Bonding Semiconductor Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123566672025Separate Epitaxy Layers for Nanowire Stack GAA Device
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123243642025Memory Device and Operating Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122439302025Semiconductor Device with Fin End Spacer Dummy Gate and Method of Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122182392025Structure and Method for Providing Line End Extensions for Fin-type Active Regions
Mosaid Technologies Incorporated
0 cites - US118483652023Semiconductor Device Structure with Source/drain Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118496552023Semiconductor Memory Devices with Electrically Isolated Stacked Bit Lines and Methods of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117858702023Memory Cell, Semiconductor Device Including Memory Cell, and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117569212023System and Method for Bonding Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117424052023Separate Epitaxy Layers for Nanowire Stack GAA Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117217612023Structure and Method for Providing Line End Extensions for Fin-type Active Regions
Mosaid Technologies Incorporated
0 cites - US116055622023Semiconductor Device with Fin End Spacer and Method of Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites