38 Patents
- US125987962026High Aspect Ratio Gate Structure Formation
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US125327232026Scalable Patterning Through Layer Expansion Process and Resulting Structures
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124842922025Methods of Reducing Parasitic Capacitance in Semicondutor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US124647742025Semiconductor Structure and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US124329632025Device Having an Air Gap Adjacent to a Contact Plug and Covered by a Doped Dielectric Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124330082025Finfet Structure with Airgap and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US124083152025Flexible Merge Scheme for Source/drain Epitaxy Regions
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US123763572025Fin Field-effect Transistor Device and Method
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123621872025Semiconductor Device Having a Uniform and Thin Silicide Layer on an Epitaxial Source/drain Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123242022025Semiconductor Device Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122372312025FINFET Device with Wrapped-around Epitaxial Structure and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY CO., Ltd.
0 cites - US122181382025Air Gap Formation Between Gate Spacer and Epitaxy Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121659252024Fin Field Effect Transistor Having Airgap and Method for Manufacturing the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121192592024Transistor Gate Contacts and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US120807692024Contact Structure with Silicide and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120092632024Methods of Reducing Parasitic Capacitance in Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120028632024Semiconductor Device with Air-gap Spacers
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- 0 cites
- US119014552024Method of Manufacturing a Finfet by Implanting a Dielectric with a Dopant
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118548682023Scalable Patterning Through Layer Expansion Process and Resulting Structures
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US118549072023Contact Air Gap Formation and Structures Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118550972023Air Gap Formation Between Gate Spacer and Epitaxy Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118551822023Low-k Gate Spacer and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US118567432023Flexible Merge Scheme for Source/drain Epitaxy Regions
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118241012023High Aspect Ratio Gate Structure Formation
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117768552023Fin Field Effect Transistor Having Airgap and Method for Manufacturing the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117770042023Fin Field Effect Transistor (finfet) Device Structure and Method for Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117354712023Semiconductor Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117356412023Finfet Structure with Airgap and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116826752023Fin Field-effect Transistor Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116108412023Interconnect Structure for Semiconductor Device and Methods of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US115575172023Fin Field Effect Transistor Having Airgap and Method for Manufacturing the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites