Patents/Inventors

Ka-hing Fung

Hsinchu CountyTW16 patents

16 Patents

US124713172025
Semiconductor Device Having Fin Structure Including Dielectric-containing Substrate with Semiconductor Surface and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US124646972025
Non-interleaving N-well and P-well Pickup Region Design for IC Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US123566822025
Semiconductor Structure with Conductive Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123175782025
Semiconductor Devices with Low Leakage Current and Methods of Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123100672025
Multigate Device with Stressor Layers and Method of Fabricating Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121488322024
Method of Forming Finfet with Low-dielectric-constant Gate Electrode Spacers
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US121426352024
Gate All-around Semiconductor Device
Parabellum Strategic Opportunities Fund LLC
0 cites
US121426852024
Finfet Device with High-k Metal Gate Stack
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120355182024
Non-interleaving N-well and P-well Pickup Region Design for IC Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US120028112024
Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US118896742024
Structure and Method for SRAM Finfet Device Having an Oxide Feature
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US118549002023
Semiconductor Device and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US117569972023
Semiconductor Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117497552023
Method of Forming Finfet with Low-dielectric-constant Gate Electrode Spacers
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US116264042023
Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US115631182023
Structure and Method for SRAM Finfet Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites