86 Patents
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- US126046742026Back Side Phase Change Memory (PCM) with PCM Back Side Source/drain Contact Structure
International Business Machines Corporation
0 cites - US125882732026Stacked Electronic Devices Having Independent Gates
International Business Machines Corporation
0 cites - US125817192026Fabrication of Silicon Germanium Channel and Silicon/silicon Germanium Dual Channel Field-effect Transistors
International Business Machines Corporation
0 cites - US125622252026Hybrid Memory for Neuromorphic Applications
International Business Machines Corporation
0 cites - US125575652026Phase Change Memory with Reduced Programming Current
International Business Machines Corporation
0 cites - US125575642026Memory Cell with a Variable Element and a Phase Change Memory
International Business Machines Corporation
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- US125506292026Self-aligned, Symmetric Phase Change Memory Element
International Business Machines Corporation
0 cites - US125503762026Work Function Metal Patterning and Middle-of-line Self-aligned Contacts for Nanosheet Technology
International Business Machines Corporation
0 cites - US125503902026Trench Isolation for Backside Contact Formation
International Business Machines Corporation
0 cites - US125139852025CFET with Independent Gate Control and Low Parasitic Capacitance
International Business Machines Corporation
0 cites - US125016982025Stacked Transistors Having Self Aligned Backside Contact with Backside Replacement Metal Gate
International Business Machines Corporation
0 cites - US125001832025Support Dielectric Fin to Prevent Gate Flop-over in Nanosheet Transistors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US124842502025Horizontally Stacked Nanosheet Gate All Around Device Structure
International Business Machines Corporation
0 cites - US124532962025Phase-change Memory Device with Conductive Cladding
International Business Machines Corporation
0 cites - US124532942025Multi-level Programming of Phase Change Memory Device
International Business Machines Corporation
0 cites - US124396312025Non-self-aligned Wrap-around Contact in a Tight Gate Pitched Transistor
International Business Machines Corporation
0 cites - US124314692025Vertically Stacked FET with Strained Channel
International Business Machines Corporation
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- US123962252025Method to Release Nano Sheet After Nano Sheet Fin Recess
International Business Machines Corporation
0 cites - US123962472025Work Function Metal Patterning for Nanosheet Cfets
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US123827082025Vertical Stacked Nanosheet CMOS Transistors with Different Work Function Metals
International Business Machines Corporation
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- US123241842025Replacement Gate Cross-couple for Static Random-access Memory Scaling
INTERNATIONAL BUSINESS MACHINES CORPORATION
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- US123102652025Dome-shaped Phase Change Memory Mushroom Cell
International Business Machines Corporation
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- US123102622025Phase Change Memory with Encapsulated Phase Change Element
International Business Machines Corporation
0 cites - US122794522025Stacked Complementary Transistor Structure for Three-dimensional Integration
International Business Machines Corporation
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- US122741852025Phase Change Memory Cell Having Pillar Bottom Electrode with Improved Thermal Insulation
International Business Machines Corporation
0 cites - US122566532025PCM Cell with Nanoheater Surrounded with Airgaps
International Business Machines Corporation
0 cites - US122455302025Phase Change Memory with Concentric Ring-shaped Heater
International Business Machines Corporation
0 cites - US122242032025Air Gap Spacer Formation for Nano-scale Semiconductor Devices
Adeia Semiconductor Solutions LLC
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- US122198852025Reducing Contact Resistance of Phase Change Memory Bridge Cell
International Business Machines Corporation
0 cites - US122075702025Phase Change Memory with Multi-level Programming
International Business Machines Corporation
0 cites - US121912082025Dual Strained Semiconductor Substrate and Patterning
International Business Machines Corporation
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- US121320982024Uniform Interfacial Layer on Vertical Fin Sidewalls of Vertical Transport Field-effect Transistors
International Business Machines Corporation
0 cites - US121193462024Vertical Field-effect Transistor with Wrap-around Contact Structure
International Business Machines Corporation
0 cites - US121130672024Forming N-type and P-type Horizontal Gate-all-around Devices
International Business Machines Corporation
0 cites - US119964802024Vertical Transistor with Late Source/drain Epitaxy
International Business Machines Corporation
0 cites - US119787832024Vertical Fin Field Effect Transistor Devices with Reduced Top Source/drain Variability and Lower Resistance
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US119634692024Phase Change Memory Cell with an Airgap to Allow for the Expansion and Restriction of the PCM Material
International Business Machines Corporation
0 cites - US119375222024Confining Filament at Pillar Center for Memory Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US119234382024Field-effect Transistor with Punchthrough Stop Region
International Business Machines Corporation
0 cites - US119233632024Semiconductor Structure Having Bottom Isolation and Enhanced Carrier Mobility
International Business Machines Corporation
0 cites - US119088902024Isolation Structure for Stacked Vertical Transistors
International Business Machines Corporation
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- US118826952024Vertical Field Effect Transistor Including Integrated Antifuse
Samsung Electronics Co., Ltd.
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- US118376042023Forming Stacked Nanosheet Semiconductor Devices with Optimal Crystalline Orientations Around Devices
International Business Machine Corporation
0 cites - US118126752023Filament Confinement in Resistive Random Access Memory
International Business Machines Corporation
0 cites - US117988512023Work Function Metal Patterning for Nanosheet Cfets
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US117911992023Nanosheet IC Device with Single Diffusion Break
International Business Machines Corporation
0 cites - US117913422023Varactor Integrated with Complementary Metal-oxide Semiconductor Devices
International Business Machines Corporation
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- US116950382023Forming Single and Double Diffusion Breaks for Fin Field-effect Transistor Structures
International Business Machines Corporation
0 cites - US116903052023Phase Change Memory Cell with an Airgap to Allow for the Expansion and Restriction of the PCM Material
International Business Machines Corporation
0 cites - US116887752023Method of Forming First and Second Contacts Self-aligned Top Source/drain Region of a Vertical Field-effect Transistor
International Business Machines Corporation
0 cites - US116826742023Stacked Nanosheet Complementary Metal Oxide Semiconductor Field Effect Transistor Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
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- US116825822023Field Effect Transistor Devices with Self-aligned Source/drain Contacts and Gate Contacts Positioned Over Active Transistors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US116770262023Transistor Having Wrap-around Source/drain Contacts
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US116659872023Integrated Switch Using Stacked Phase Change Materials
International Business Machines Corporation
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- US116521562023Nanosheet Transistor with Asymmetric Gate Stack
International Business Machines Corporation
0 cites - US116371792023Airgap Vertical Transistor Without Structural Collapse
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US116372382023Resistive Random-access Memory Cell and Manufacturing Method Thereof
International Business Machines Corporation
0 cites - 0 cites
- US116262872023Semiconductor Device with Improved Contact Resistance and via Connectivity
International Business Machines Corporation
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- US115881042023Resistive Memory with Vertical Transport Transistor
International Business Machines Corporation
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