Patents/Inventors

Junli Wang

Slingerlands, NYUS89 patents

81 Patents

US126222522026
Backside Contacts for Source/drain Regions
International Business Machines Corporation
0 cites
US126158172026
Stacked FET with Low Parasitic-capacitance Gate
International Business Machines Corporation
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US125934682026
Self-aligned Backside Contact with Increased Contact Area
International Business Machines Corporation
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US125936682026
Shallow and Deep Contacts with Stitching
International Business Machines Corporation
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US125817022026
Common Self Aligned Gate Contact for Stacked Transistor Structures
International Business Machines Corporation
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US125751132026
High Density Memory with Stacked Nanosheet Transistors
International Business Machines Corporation
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US125686692026
Placeholder Profile Formation for Backside Contact
International Business Machines Corporation
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US125637152026
Stacked Random-access-memory with Complementary Adjacent Cells
International Business Machines Corporation
0 cites
US125576272026
Stacked FET with Bottom Epi Size Control and Wraparound Backside Contact
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US125573532026
Method and Structure for a Logic Device and Another Device
International Business Machines Corporation
0 cites
US125504482026
Protection Diode to Prevent Charge Damage During MOL
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US125507122026
Bulk Substrate Backside Power Rail
0 cites
US125435542026
Stacked Field Effect Transistor Contacts
International Business Machines Corporation
0 cites
US124842652025
Subtractive Source Drain Contact for Stacked Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US124778192025
Stacked FET with Extremely Small Cell Height
International Business Machines Corporation
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US124646962025
Static Random Access Memory Device with Stacked Fets
International Business Machines Corporation
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US124577622025
Cross Bar Vertical Fets
International Business Machines Corporation
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US124462902025
Asymmetric Gate Extension in Stacked FET
International Business Machines Corporation
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US124463202025
Bottom Contact with Self-aligned Spacer for Stacked Semiconductor Devices
International Business Machines Corporation
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US124380342025
Narrowing Single Diffusion Break
International Business Machines Corporation
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US124396602025
Vertical Transistor with Reduced Cell Height
International Business Machines Corporation
0 cites
US124330202025
Multi-vt Solution for Replacement Metal Gate Bonded Stacked FET
International Business Machines Corporation
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US124245912025
Method and Structure of Forming Independent Contact for Staggered CFET
International Business Machines Corporation
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US124024082025
Stacked FETS Including Devices with Thick Gate Oxide
International Business Machines Corporation
0 cites
US123962272025
Full Wrap Around Backside Contact
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US123895822025
High Density Stacked Vertical Transistor Static Random Access Memory Structure
International Business Machines Corporation
0 cites
US123763692025
Finfet Devices
Adeia Semiconductor Solutions LLC
0 cites
US123693672025
Bulk Nanosheet with Dielectric Isolation
Adeia Semiconductor Solutions LLC
0 cites
US123639902025
Upper and Lower Gate Configurations of Monolithic Stacked Finfet Transistors
International Business Machines Corporation
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US123494452025
Vertically Integrated Semiconductor Device
International Business Machines Corporation
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US123494582025
Staggered Stacked Circuits with Increased Effective Width
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US123425782025
Stacked Layer Memory Suitable for SRAM and Having a Long Cell
International Business Machines Corporation
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US123362942025
Gate-cut and Separation Techniques for Enabling Independent Gate Control of Stacked Transistors
International Business Machines Corporation
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US123288592025
Stacked FET SRAM
International Business Machines Corporation
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US123226522025
Local Interconnect for Cross Coupling
International Business Machines Corporation
0 cites
US123175372025
Reduced Parasitic Capacitance Semiconductor Device Containing at Least One Local Interconnect Passthrough Structure
International Business Machines Corporation
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US123100722025
Middle of Line Structure with Stacked Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US122782372025
Stacked FETS with Non-shared Work Function Metals
International Business Machines Corporation
0 cites
US122781842025
Vertically-stacked Field Effect Transistor Cell
International Business Machines Corporation
0 cites
US122726482025
Semiconductor Device Having a Backside Power Rail
International Business Machines Corporation
0 cites
US122680162025
Buried Power Rail Formation for Vertical Field Effect Transistors
International Business Machines Corporation
0 cites
US122680262025
High Aspect Ratio Contact Structure with Multiple Metal Stacks
International Business Machines Corporation
0 cites
US121763482024
Self-aligned Hybrid Substrate Stacked Gate-all-around Transistors
International Business Machines Corporation
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US121488332024
Three-dimensional, Monolithically Stacked Field Effect Transistors Formed on the Front and Backside of a Wafer
International Business Machines Corporation
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US121426562024
Staggered Stacked Semiconductor Devices
International Business Machines Corporation
0 cites
US121425992024
Stacked Transistor Structure with Reflection Layer
International Business Machines Corporation
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US121130132024
Dual Color via Patterning
International Business Machines Corporation
0 cites
US121071682024
Independent Gate Length Tunability for Stacked Transistors
International Business Machines Corporation
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US120626572024
Long Channel and Short Channel Vertical FET Co-integration for Vertical FET VTFET
International Business Machines Corporation
0 cites
US120466732024
Vertical Transistor and Method of Forming the Vertical Transistor
International Business Machines Corporation
0 cites
US120093952024
Self-aligned Block for Vertical Fets
International Business Machines Corporation
0 cites
US120017722024
Ultra-short-height Standard Cell Architecture
International Business Machines Corporation
0 cites
US120028742024
Buried Power Rail Contact
International Business Machines Corporation
0 cites
US119844012024
Stacked FET Integration with BSPDN
International Business Machines Corporation
0 cites
US119014402024
Sacrificial Fin for Self-aligned Contact Rail Formation
International Business Machines Corporation
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US118958182024
Stacked FET SRAM
International Business Machines Corporation
0 cites
US118943612024
Co-integrated Logic, Electrostatic Discharge, and Well Contact Devices on a Substrate
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US118944232024
Contact Resistance Reduction in Nanosheet Device Structure
International Business Machines Corporation
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US118878902024
Partial Self-aligned Contact for MOL
International Business Machines Corporation
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US118759872024
Contacts Having a Geometry to Reduce Resistance
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US118627102024
Vertical Transistor Including Symmetrical Source/drain Extension Junctions
International Business Machines Corporation
0 cites
US118551912023
Vertical FET with Contact to Gate Above Active Fin
International Business Machines Corporation
0 cites
US118525822023
Automatic Photocurrent Spectrum Measurement System Based on Fourier Infrared Spectrometer
East China Normal University
0 cites
US118307742023
Buried Contact Through Fin-to-fin Space for Vertical Transport Field Effect Transistor
International Business Machines Corporation
0 cites
US118175012023
Three-dimensional, Monolithically Stacked Field Effect Transistors Formed on the Front and Backside of a Wafer
International Business Machines Corporation
0 cites
US118174972023
Vertical Field Effect Transistor Inverter with Single Fin Device
International Business Machines Corporation
0 cites
US117770342023
Hybrid Complementary Field Effect Transistor Device
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US117642982023
VTFET with Buried Power Rails
International Business Machines Corporation
0 cites
US117497442023
Fin Structure for Vertical Transport Field Effect Transistor
International Business Machines Corporation
0 cites
US117157942023
VTFET with Cell Height Constraints
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US117106662023
Dummy Fin Template to Form a Self-aligned Metal Contact for Output of Vertical Transport Field Effect Transistor
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US117105212023
Static Random-access Memory Cell Design
International Business Machines Corporation
0 cites
US116950382023
Forming Single and Double Diffusion Breaks for Fin Field-effect Transistor Structures
International Business Machines Corporation
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US116886352023
Oxygen-free Replacement Liner for Improved Transistor Performance
International Business Machines Corporation
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US116705802023
Subtractive via Etch for MIMCAP
International Business Machines Corporation
0 cites
US116644552023
Wrap-around Bottom Contact for Bottom Source/drain
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US116658772023
Stacked FET SRAM Design
International Business Machines Corporation
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US116581162023
Interconnects on Multiple Sides of a Semiconductor Structure
International Business Machines Corporation
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US116213322023
Wraparound Contact to a Buried Power Rail
International Business Machines Corporation
0 cites
US116211892023
Barrier-less Prefilled via Formation
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US116159882023
Finfet Devices
Tessera, LLC
0 cites