Junjing Bao

12 Patents

• US125139552025

  Transistors Having Different Channel Lengths and Comparable Source/drain Spaces

  QUALCOMM INCORPORATED

  0 cites
• US125060352025

  Self-aligned Source/drain Contact Structure and Method of Manufacturing the Same

  QUALCOMM Incorporated

  0 cites
• US124577832025

  Selective Contact on Source and Drain

  QUALCOMM Incorporated

  0 cites
• US124462642025

  Complementary Field Effect Transistor (CFET) with Balanced N and P Drive Current

  QUALCOMM INCORPORATED

  0 cites
• US123425952025

  Transistor Cell with Self-aligned Gate Contact

  QUALCOMM Incorporated

  0 cites
• US120682382024

  Back-end-of-line (BEOL) High Resistance (hi-r) Conductor Layer in a Metal Oxide Metal (MOM) Capacitor

  QUALCOMM Incorporated

  0 cites
• US120573942024

  Three-dimensional (3D) Interconnect Structures Employing via Layer Conductive Structures in via Layers and Related Fabrication Methods

  QUALCOMM Incorporated

  0 cites
• US119424142024

  Integrated Circuits (ics) Employing Directly Coupled Metal Lines Between Vertically-adjacent Interconnect Layers for Reduced Coupling Resistance, and Related Methods

  QUALCOMM Incorporated

  0 cites
• US119014272024

  Gate Contact Isolation in a Semiconductor

  QUALCOMM Incorporated

  0 cites
• US119014342024

  Semiconductor Having a Source/drain Contact with a Single Inner Spacer

  QUALCOMM Incorporated

  0 cites
• US118551982023

  Multi-gate High Electron Mobility Transistors (hemts) Employing Tuned Recess Depth Gates for Improved Device Linearity

  QUALCOMM INCORPORATED

  0 cites
• US117107892023

  Three Dimensional (3D) Double Gate Semiconductor

  QUALCOMM Incorporated

  0 cites