Patents/Inventors

Junhyoung Kim

Suwon-siKR28 patents

29 Patents

US125816532026
Semiconductor Devices and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites
US125324722026
Three-dimensional Semiconductor Memory Device and Electronic System Including the Same
Samsung Electronics Co., Ltd.
0 cites
US125001712025
Non-volatile Memory Devices with Dummy Channel Structures in Contact Region and Associated Systems
Samsung Electronics Co., Ltd.
0 cites
US124761912025
Semiconductor Devices and Data Storage Systems Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US124143012025
Semiconductor Device and Data Storage System Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US124023162025
Semiconductor Device and Data Storage System Including the Same
Samsung Electronics Co., Ltd.
0 cites
US124023172025
Semiconductor Devices and Data Storage Systems Including the Same
Samsung Electronics Co., Ltd.
0 cites
US123961742025
Semiconductor Device and Data Storage System Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US123680992025
Semiconductor Device and Electronic System Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US123638992025
Semiconductor Devices and Data Storage Systems Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US123566262025
Semiconductor Devices Including Capacitor Electrodes
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US123493482025
Semiconductor Device Including Support Structure, Method for Manufacturing the Same and Electronic System Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US122951412025
Memory Device with Metal Pad Pattern and System Including the Same
Samsung Electronics Co., Ltd.
0 cites
US122074692025
Vertical Memory Devices and Methods of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US122009302025
Semiconductor Devices and Data Storage Systems Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US121855342024
Integrated Circuit Device
Samsung Electronics Co., Ltd.
0 cites
US121659762024
Three-dimensional Semiconductor Device Including a Through-via Structure Having a via Liner Having Protruding Portions
Samsung Electronics Co., Ltd.
0 cites
US121676012024
Three-dimensional (3D) Semiconductor Memory Device
Samsung Electronics Co., Ltd.
0 cites
US121333812024
Semiconductor Devices and Data Storage Systems Including the Same
Samsung Electronics Co., Ltd.
0 cites
US121333842024
Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites
US120966342024
Semiconductor Device Including Stack Structure
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US119730252024
Three-dimensional Semiconductor Memory Devices
Samsung Electronics Co., Ltd.
0 cites
US119178192024
Three-dimensional Semiconductor Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US118625562024
Semiconductor Devices
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US118390912023
Three-dimensional Semiconductor Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US118188892023
Vertical Memory Devices
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US117372702023
Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US116371212023
Three-dimensional (3D) Semiconductor Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US116264132023
Semiconductor Device Including Gate Layer and Vertical Structure
SAMSUNG ELECTRONICS CO., Ltd.
0 cites