16 Patents
- US126158182026Semiconductor Transistor Devices Including Alternatively Stacked Source/drain Regions
Samsung Electronics Co., Ltd.
0 cites - US125573622026Semiconductor Device Including Source/drain Pattern with Varied Germanium Concentrations
SAMSUNG ELECTRONICS CO., Ltd.
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- US124713452025Semiconductor Device and Method for Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US124531482025Integrated Circuit Device Including Field-effect Transistor with Controlled Sizes and Configurations
Samsung Electronics Co., Ltd.
0 cites - 0 cites
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- US123241952025Multi-channel Field Effect Transistors with Enhanced Multi-layered Source/drain Regions
Samsung Electronics Co., Ltd.
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- US117770322023Semiconductor Devices and Methods of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US116769632023Integrated Circuit Device and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites