69 Patents
- US1257068520262-methoxyestradiol Derivatives and Medical Uses Thereof
KOREA INSTITUTE OF RADIOLOGICAL & MEDICAL SCIENCES
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- US125310922026Method of Generating a Multi-level Signal Using a Selective Level Change, a Method of Transmitting Data Using the Same, and a Transmitter and Memory System Performing the Same
SAMSUNG ELECTRONICS CO., Ltd.
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- US124888162025Transmitter, Memory Device and Semiconductor Device Including the Transmitter
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US124518942025Analog-to-digital Conversion Circuit and Operating Method of the Same
Samsung Electronics Co., Ltd.
0 cites - US124444602025Memory Device, Electronic Device, and Operation Method of Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US124250512025Error Correction Code Decoder Using Constacyclic Code, and Memory Device and Memory System Including the Same
Seoul National University R&DB Foundation
0 cites - US124184442025Equalizers, Communication Systems and Operating Methods Thereof
Samsung Electronics Co., Ltd.
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- US123951832025Time Domain Analog-to-digital Converter and Analog-to-digital Converting Method
Korea University Research And Business Foundation
0 cites - US123877982025Nonvolatile Memory Device Providing Input/output Compatibility and Method for Setting Compatibility Thereof
Samsung Electronics Co., Ltd.
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- US123546752025Nonvolatile Memory Device Including Power Gating Circuit and Input/output Circuit of a Nonvolatile Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123408682025Semiconductor Device and Method for Preforming Emphasis Driving
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123323072025Transmitter for Ultra-high Speed and Storage Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123282122025Transmitting Circuit Providing Encoded Data, Electronic Device Including the Same, and Method of Operating the Electronic Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US123212902025Memory Device Supporting a High-efficient Input/output Interface and a Memory System Including the Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123231152025Operational Transconductance Amplifier Circuit Including Active Inductor
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122938012025Memory Interface and Semiconductor Memory Device and Semiconductor Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122723962025Method of Generating a Multi-level Signal Using Selective Equalization, Method of Transmitting Data Using the Same, and Transmitter and Memory System Performing the Same
SAMSUNG ELECTRONICS CO., Ltd.
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- US121768712024Differential Amplifier Capable of Offset Compensation of Differential Output Signal and Adaptive Continuous-time Linear Equalizer Including the Same
University Of Seoul Industry Cooperation Foundation
0 cites - US121769122024Electronic Devices Converting Input Signals to Digital Value and Operating Methods of Electronic Devices
Samsung Electronics Co., Ltd.
0 cites - US121769262024Encoding and Decoding Apparatuses and Methods for Implementing Multi-mode Coding
SAMSUNG ELECTRONICS CO., Ltd.
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- US120738752024Receiver with Pipeline Structure for Receiving Multi-level Signal and Memory Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US120615612024Memory Device Supporting a High-efficient Input/output Interface and a Memory System Including the Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
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- US120571562024Quadrature Error Correction Circuit and Semiconductor Memory Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US120195782024Parallel-to-serial Interface Circuit and Transmission Device Having the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US120090572024Semiconductor Memory Device and Memory System Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US119728312024Receiver for Receiving Multi-level Signal and Memory Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US119408302024Low Dropout Regulator and Memory Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US119429682024Transmitter and Receiver for 3-level Pulse Amplitude Modulation Signaling and System Including the Same
Samsung Electronics Co., Ltd.
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- US118884862024High Resolution Phase Correcting Circuit and Phase Interpolating Device
Samsung Electronics Co., Ltd.
0 cites - US118886542024Offset Detector Circuit for Differential Signal Generator, Receiver, and Method of Compensating for Offset of Differential Signal Generator
NANYANG TECHNOLOGICAL UNIVERSITY
0 cites - US118705042024Translation Device, Test System Including the Same, and Memory System Including the Translation Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US118245632023Encoding and Decoding Apparatuses and Methods for Implementing Multi-mode Coding
SAMSUNG ELECTRONICS CO., Ltd.
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- US118048382023Transmitter Circuit Including Selection Circuit, and Method of Operating the Selection Circuit
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117898792023Memory Device Supporting a High-efficient Input/output Interface and a Memory System Including the Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117918112023Delay Circuit and Clock Error Correction Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US117826182023Memory Device, Method of Calibrating Signal Level Thereof, and Memory System Having the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117420162023Quadrature Error Correction Circuit and Semiconductor Memory Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117360972023Clock Signal Delay Path Unit and Semiconductor Memory Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US117213912023Multi Channel Semiconductor Device Having Multi Dies and Operation Method Thereof
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US116994722023Semiconductor Memory Device and Memory System Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US116930302023Probe Device, Test Device, and Test Method for Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
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- US116694482023Transmitters for Generating Multi-level Signals and Memory System Including the Same
Samsung Electronics Co., Ltd.
0 cites - US116578592023Memory Device, Controller Controlling the Same, Memory System Including the Same, and Operating Method Thereof
Samsung Electronics Co., Ltd.
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- US116517992023Method of Generating a Multi-level Signal Using a Selective Level Change, a Method of Transmitting Data Using the Same, and a Transmitter and Memory System Performing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US116270212023Data Processing Device and Memory System Including the Same
IUCF-HYU (Industry-university Cooperation Foundation Hanyang University
0 cites - US116158332023Multi-level Signal Receivers and Memory Systems Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US115942672023Memory Device for Receiving One Clock Signal as a Multi-level Signal and Restoring Original Data Encoded Into the Clock Signal and Method of Operating the Same
Samsung Electronics Co., Ltd.
0 cites - US115875982023Memory Device for Generating Pulse Amplitude Modulation-based DQ Signal and Memory System Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US115876092023Multi-level Signal Receivers and Memory Systems Including the Same
Samsung Electronics Co., Ltd.
0 cites - US115819602023Translation Device, Test System Including the Same, and Memory System Including the Translation Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US115746622023Memory Devices Configured to Generate Pulse Amplitude Modulation-based DQ Signals, Memory Controllers, and Memory Systems Including the Memory Devices and the Memory Controllers
Samsung Electronics Co, Ltd.
0 cites - US115514152023Method and Apparatus for Regeneration and Prediction of Tree Map
Samsung Electronics Co., Ltd.
0 cites - US115459662023Injection Locking Oscillator Circuit and Operating Method
Samsung Electronics Co., Ltd.
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