Jung Yup Yang

2 Patents

• US125139362025

  Complementary Semiconductor Devices Using Halide Perovskite Thin Films

  Industry-academic Cooperation Foundation, Kunsan National University

  0 cites
• US124578402025

  2D Material-integrated Halide Perovskite Thin-film Semiconductor Device and Its Fabrication Method

  Industry-academic Cooperation Foundation, Kunsan National University

  0 cites