16 Patents
- US125076002025Phase Change Memory Device Wherein First and Second Electrodes Penetrate Through Dielectric and Phase Change Layers
Taiwan Semicondcutor Manufacturing Company, Ltd.
0 cites - US123896942025Data Storage Element and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123361922025Method of Forming Semiconductor Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122323312025Memory Devices with Selector Layer and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122178172025Memory Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121610552024Memory Array, Semiconductor Chip and Manufacturing Method of Memory Array
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121209682024Semiconductor Device, Memory Cell Including Connecting Structure Having Base Portion and Pillar Portion, and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120417902024Semiconductor Device, Memory Cell and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119633692024Memory Array with Asymmetric Bit-line Architecture
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118376112023Data Storage Element and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118056622023Memory Devices with Selector Layer and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117638572023Memory Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117372872023Memory Device, Method of Forming the Same, and Semiconductor Device Having the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116476822023Memory Array, Semiconductor Chip and Manufacturing Method of Memory Array
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116057792023Memory Cell, Method of Forming the Same, and Semiconductor Die
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US115945762023Semiconductor Device, Memory Cell and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites